IPP10N03LB G Allicdata Electronics
Allicdata Part #:

IPP10N03LBGIN-ND

Manufacturer Part#:

IPP10N03LB G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 50A TO-220
More Detail: N-Channel 30V 50A (Tc) 58W (Tc) Through Hole PG-TO...
DataSheet: IPP10N03LB G datasheetIPP10N03LB G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 20µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 58W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1639pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IPP10N03LB G is a part of the transistor family, along with FETs and MOSFETs, which all work in different ways to regulate electricity. The IPP10N03LB G is specifically a single MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. This type of transistor works to control current in a circuit and will switch off or on depending on the voltage level. It is known for its high input impedance and its ability to handle high amounts of power.

The IPP10N03LB G’s most prominent application field is in power electronic switch circuits, for switching loads like motors, relays and coils. As an electronic switch, it works by opening or closing the switch connection, depending on the amount of voltage or current that is applied to it. It is also used in current amplification circuits to provide them with better power control.

The working principle of the IPP10N03LB G is similar to other MOSFET transistors; however, it also has a few unique features. Firstly, it uses a “gate” made from a metal oxide semiconductor, which allows the transistor to open or close the desired switch connection. Secondly, the IPP10N03LB G has a built-in reverse protection diode, which prevents it from damaging other components in the circuit if the voltage gets too high. Lastly, the IPP10N03LB G has a dual gate structure, which helps reduce the amount of current that is required to turn the switch on.

In a nutshell, the IPP10N03LB G is a single MOSFET transistor which is mainly used in power electronic switch circuits. It works by opening or closing the switch connection depending on the amount of voltage or current that is applied to it, and it also has additional engineering features such as a built-in reverse protection diode and a dual gate structure. It is known for its durability and for providing stabilized, reliable power output.

The specific data is subject to PDF, and the above content is for reference

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