IPP60R160P6XKSA1 Allicdata Electronics
Allicdata Part #:

IPP60R160P6XKSA1-ND

Manufacturer Part#:

IPP60R160P6XKSA1

Price: $ 2.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V TO220-3
More Detail: N-Channel 600V 23.8A (Tc) 176W (Tc) Through Hole P...
DataSheet: IPP60R160P6XKSA1 datasheetIPP60R160P6XKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 2.33100
10 +: $ 2.08215
100 +: $ 1.70755
500 +: $ 1.38271
1000 +: $ 1.16614
Stock 1000Can Ship Immediately
$ 2.56
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 176W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Series: CoolMOS™ P6
Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPP60R160P6XKSA1 is a state-of-the-art depletion-mode N-channel MOSFET module. With its high power dissipation, low on-state resistance, and easy to use package, it is an ideal choice for a variety of load switching and power management applications. In this article we will discuss the application fields and working principle of the IPP60R160P6XKSA1.

The applications of the IPP60R160P6XKSA1 are vast and varied. Thanks to its low on-state resistance and high power dissipation, the module is ideal for switching and controlling high power loads in industrial, automotive, and consumer electronics applications. It is also useful for Motor Control, power system control, and lightning systems, among others. The convenience of the easy to use package additionally makes it attractive for a variety of power switching applications.

To understand the advantages of the IPP60R160P6XKSA1, it is important to understand how it works. It is a depletion-mode N-channel MOSFET module, meaning it has negative channel voltage (Vgs) with low on-state resistance when the gate voltage is at zero. When the gate voltage is increased, i.e. to a positive value, the semiconductor switches and the current begins to flow. Conversely, when the gate voltage is decreased, i.e. to a negative value, the current is cut off. And since the IPP60R160P6XKSA1 is a depletion-mode FET, the power dissipation is minimal when the device is off, allowing for higher efficiency in power management applications.

The IPP60R160P6XKSA1 also features an on-chip gate protection diode which prevents the gate from damaging when a high voltage switch is connected directly to the gate input. This feature makes the module suitable for applications requiring voltage spikes, such as Lighting Control, Protection, and Motor Control.

The IPP60R160P6XKSA1’s aspects, such as the low on-state resistance and the on-chip gate protection diode, make it the ideal choice for a wide range of power switching, motor control, and protection applications, as well as any application requiring power management with high efficiency. Its easy to use package and high power dissipation make it attractive for a variety of power switching applications Makers, hobbyists, and Engineering professionals can use the module to easily build reliable circuits.

The specific data is subject to PDF, and the above content is for reference

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