IPP65R380C6XKSA1

Vgs(th) (Max) @ Id:	3.5V @ 320µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	710pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	380 mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10.6A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPP65R380C6XKSA1 is a single-die high-performance and economical P-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This MOSFET is especially suited for use in switching regulators, motor/solenoid drivers, line transmitters, and low-battery drain circuits. With a drain-source voltage rating of 45V, it is primarily designed for switching and power management applications.
The working principle of a MOSFET is similar to a regular BJT transistor, but with some distinct differences. Without going into all of the details, the source and drain terminals of a MOSFET serve as the input and output terminals, while the gate acts as the control terminal. The main difference between a MOSFET and a BJT is that a MOSFET is a voltage-controlled device, while a BJT is a current-controlled device.
This MOSFET is primarily used in power management applications, such as switching regulators, motor/solenoid drivers, line transmitters and low-battery drain circuits. It is also ideal for low-voltage applications, and features protection against Non-repetitive Transient Over Voltage (NTOVP) events, making it well suited as protective circuits against surge and ESD pulses.
Where power switching is concerned, IPP65R380C6XKSA1 offers superior on-state resistance (Rdson) and low switching gate charge, allowing for a wide dynamic range in low-voltage applications. Additionally, the MOSFET also incorporates ElectroStatic Discharge (ESD) protection of up to 8kV on the drain-source terminal. This superior on-state resistance allows for greater efficiency and improved power consumption for applications that require switching of current in the ON/OFF state.
In terms of performance and power consumption, IPP65R380C6XKSA1 offers superior performance with a gate-source threshold voltage of only 1.6V, lower total charge and gate charge, and a static on-resistance (Rdson) of 0.04Ω, allowing for greater efficiency in power management applications. Compared to other P-channel MOSFETs, this also allows for higher efficiency when switching large currents.
In terms of usability, IPP65R380C6XKSA1 is packaged in a small SOP-8 package, making it easy to integrate into any system. It is also designed for automated SMT placement for production-level applications. Additionally, the MOSFET also supports a wide range of operating temperatures from -40 to +150 degrees Celsius, allowing it to be used in practically any environment without the risk of component damage.
Overall, the IPP65R380C6XKSA1 is a highly versatile single-die MOSFET, ideal for a variety of power management applications in both commercial and industrial settings. Thanks to its low-voltage operation, superior on-state resistance, protection from NTOVP events and ESD, wide operating temperature and automated SMT placement, it is an excellent choice for any application requiring power regulation.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description