IPP60R190E6XKSA1

The IPP60R190E6XKSA1 is a CoolMOS Power Transistor, which is an advanced N-channel low-voltage power MOSFET. This MOSFET can be used in a number of applications, from power supplies and general converter designs to e-mobility and more. It is specifically designed for operation in harsh environments and offers a high level of performance and efficiency, making it ideal for a wide range of applications.

Application Field

The IPP60R190E6XKSA1 is a cost-effective solution for many applications in the automotive, industrial and consumer electronics markets. It offers an industry-leading on-state resistance and improved EMI noise performance, making it an ideal choice for DC-DC converters and power supplies. It is also a suitable choice for industrial motor drives, such as three-phase inverters, AC motor drives and other motor control applications. Additionally, it is suited to a number of e-mobility applications including traction, battery chargers and automotive electronics, as well as general purpose appliances and lighting systems.

Working Principle

The CoolMOS Power Transistor is based on N-channel power MOSFET technology. This technology utilizes a semiconductor material having an N-type doping which produces an N-channel device that can be switched on and off by varying the gate voltage. The IPP60R190E6XKSA1 also features a number of advanced features such as EMI noise reduction and improved on-state resistance. It also offers an improved load-dump protection rating, making it ideal for many automotive and commercial applications.

The CoolMOS Power Transistor utilises fast switching capabilities that are essential for many modern applications. It is designed to switch at higher frequencies, reducing noise and improving efficiency. This makes it a highly efficient choice for a number of different applications, in particular those which require higher frequency switching. It also has a low gate charge which reduces conduction losses.

The IPP60R190E6XKSA1 also offers excellent thermal performance and current carrying capability, both of which are very important for high power applications. It also offers a high level of integration, reducing design time and providing a cost-effective solution.

Overall, the IPP60R190E6XKSA1 is an advanced N-channel MOSFET which offers a wide range of features making it a suitable choice for a wide range of applications. It is especially suited for automotive, industrial and consumer electronics applications and its advanced features also make it suitable for a number of e-mobility applications.