IPP65R190CFDAAKSA1

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The IPP65R190CFDAAKSA1 is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed with advanced process technology, giving it superior performance and low on-resistance. It is a single N-Channel MOSFET, meaning it is comprised of one source, one gate, and one drain. It is a Power Field Effect Transistor (PFET), meaning it is used for high-voltage and high-power applications. Due to its low on-resistance, it is well-suited for power conversion and wireless energy transfer.

The features that make the IPP65R190CFDAAKSA1 an optimal choice for many applications are its low on-resistance (Rdson), which is approximately 0.19 ohm, and its exceptionally high voltage rating of 190V. Its superior electrical characteristics also place it in a class above most other available MOSFET solutions. These superior electrical characteristics allow it to handle power up to a rating of 65A and feature an exceptionally high output current of 2.55A.

As its name implies, the IPP65R190CFDAAKSA1 has an N-Channel MOSFET structure, which refers to the type of semiconductor material used to build its transistors. A MOSFET is composed of four main parts: a source, a gate, a drain, and a substrate. The source and the drain are two terminals used to draw current from and release current back into the circuit, respectively. The gate is the control element of the MOSFET; when a voltage is applied to the gate, the transistor opens allowing current to flow. The substrate is the underlying layer of silicon used to form the transistor structure.

The IPP65R190CFDAAKSA1’s N-Channel MOSFET structure is ideal for many high-voltage and high-power applications. This type of transistor is well-suited for power conversion as it can handle relatively high current levels at low voltage levels and dissipates heat quickly, which is important for high-current applications. Additionally, the low on-resistance of the IPP65R190CFDAAKSA1 means it has very low power dissipation even during heavy use, making it a great choice for wireless energy transfer. This makes it an ideal choice for a variety of situations, such as motor control, lighting systems, and energy monitoring.

In addition to its excellent electrical characteristics, the IPP65R190CFDAAKSA1 is notable for its small size. Its package is only 9.7mm x 14.2mm, allowing it to be placed in tight spaces, making it a great choice for compact designs. The package is also designed to dissipate heat quickly, making it an ideal solution for applications that require large power ratings from a small package. Additionally, its package features air vents which allow for a continuous flow of air, improving thermal performance.

Given its high power rating, low on-resistance, and small size, the IPP65R190CFDAAKSA1 is an ideal choice for applications requiring high power conversion and good thermal performance in a small package. The N-Channel MOSFET structure used in the IPP65R190CFDAAKSA1 allows it to handle current levels of up to 65A and a voltage rating up to 190V, making it a great choice for applications such as motor control, lighting systems, and energy monitoring. The combination of its advanced process technology, low on-resistance, and small size make this device especially well-suited for power and thermal applications.

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