IPP65R660CFDXKSA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPP65R660CFDXKSA1 is a Single N-channel (enhancement mode) MOSFET transistor which is mainly used in high voltage, low current applications and circuits. This device is ideally suited for switching and load drive applications.

A Mosfet is a semiconductor device which consists of three regions: the source, drain and gate. When voltage is applied to the gate, a current is created between the source and drain by an electric field formed between them. This creates an "inversion layer" to control the current flow in the channel. The MOSFET is the most common type of field effect transistor (FET). They are used in many high-power switching applications such as power supplies and motor control because they are fast, efficient and extremely reliable.

The IPP65R660CFDXKSA1 is a Single N-Channel Enhancement Mode MOSFET which can operate over a wide temperature range, up to 150°C. This device is designed for power management applications such as DC-DC converters and Motor Control systems. Its wide operating range enables it to be used for high current and high voltage applications. Its versatile features also make it ideal for switching applications, especially when there are large current spikes or noisy environments. The IPP65R660CFDXKSA1 is also capable of operating in pulse width modulation mode which allows for precise control of output power.

The working principle of the IPP65R660CFDXKSA1 is relatively simple. When voltage is applied to the gate, an electric field is created between the source and drain. This electric field inverts the majority carriers in the channel to form an electron depletion region in the channel. The electrons in this region oppose the flow of charge, providing a strong turning effect on the flow of electrons. As a result, electrons are attracted to the drain and repelled away from the source and this causes current to flow between the source and the drain. The voltage applied to the gate is known as the threshold voltage and this determines the amount of current that can be passed when the MOSFET is on.

The IPP65R660CFDXKSA1 is an ideal solution for applications requiring high voltage, low current switching. It is a rugged, reliable and efficient device that is suitable for a wide range of power management applications. Its high operating temperature and pulse width modulation mode make it particularly useful in demanding environments. Additionally, its wide operating range makes it ideal for use in a number of different applications.

The specific data is subject to PDF, and the above content is for reference