IPP60R380C6XKSA1

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IPP60R380C6XKSA1 Application Field and Working Principle

The IPP60R380C6XKSA1 is a high current, low on-resistance N-channel silicon MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a single, low-voltage power MOSFET designed for automotive and industrial applications.

MOSFETs are used for a wide range of applications and designs, ranging from high-power automotive and industrial applications to simple switching electronics like logic circuits. The IPP60R380C6XKSA1 is suited for applications due to its low on-resistance and high current. Its features and performance make it ideal for high-current/high-power applications such as motor control, power tools, toys, and more.

The IPP60R380C6XKSA1 is composed of a single N-channel enhancement silicon MOSFET. It has a RDS(on) value of 25 mΩ, is rated for a maximum of 320 A, and has a maximum drain-source voltage of 60 V. It has the capability to handle high peak energies and withstand high drain-source voltages.

The working principle of an N-channel MOSFET is based on “electron conduction.” The two terminals of the device are the source and drain. The control of the device is done by the gate terminal. By applying a negative voltage to the gate terminal, the device turns “ON” and the electrons are forced to the source, thus allowing current to flow from the drain to the source and from the source to the drain, depending on the magnitude of the voltage. In the “OFF” state, there is no current flow between the source and the drain. By increasing the gate voltage, more electrons will be forced to the drain terminal, thus increasing the current flow. By decreasing the gate voltage, fewer electrons pass through the device, thus decreasing the current flow.

The IPP60R380C6XKSA1 is a popular choice for applications such as motor control, power tools, and toys due to its low on-resistance, high current rating, and ability to handle high peak energies. It is also suitable for use in DC-DC converters, high-efficiency LED drivers, LED lighting, and other applications that require high current flow with low losses.

Overall, the IPP60R380C6XKSA1 is a single, low-voltage power MOSFET designed for a variety of applications due to its low on-resistance and high current. With its capability to handle high peak energies and withstand high drain-source voltages, it is an excellent choice for applications that require high current and low losses.

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