IPP60R380E6XKSA1 Allicdata Electronics
Allicdata Part #:

IPP60R380E6XKSA1-ND

Manufacturer Part#:

IPP60R380E6XKSA1

Price: $ 1.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 10.6A TO220
More Detail: N-Channel 600V 10.6A (Tc) 83W (Tc) Through Hole PG...
DataSheet: IPP60R380E6XKSA1 datasheetIPP60R380E6XKSA1 Datasheet/PDF
Quantity: 210
1 +: $ 1.42380
10 +: $ 1.28583
100 +: $ 1.03301
500 +: $ 0.80345
1000 +: $ 0.66572
Stock 210Can Ship Immediately
$ 1.57
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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ipp60r380e6xksa1 is a single field-effect transistor (FET) that is widely used in various electrical applications. This high performance transistor is built using a unique structure combining advanced Power MOSFET process with secondary planar technology, resulting in a device with excellent electrical performance. It is widely used in applications like power conversion, motor control, and electrostatic discharge protection.

The ipp60r380e6xksa1 has a very high input impedance, which means that it is suitable for controlling and amplifying signals, or for use in applications with large voltage losses. It is capable of handling high currents, making it suitable for power applications. It is highly resilient to thermal changes, making it suitable for use in harsh and hot environments. Furthermore, its compact size makes it ideal for use in small scale projects or where space is at a premium.

The working principle of the ipp60r380e6xksa1 is based on the MOSFET structure, which is a field-effect transistor. It consists of a gate terminal, a source terminal, and a drain terminal. The gate terminal is connected to a metal gate plate, and when a certain voltage is applied to it, an electric field is generated between the gate and the source terminal. This field induces the source terminal to create a charge. When a current passes through the drain terminal, a current flow is created between the source and the drain terminals, allowing a controlled current flow.

The ipp60r380e6xksa1 is widely used in applications such as motor drives and power supplies, as its high output current makes it an ideal solution for these applications. Its high current rating and fast switching capability makes it suitable for use in high frequency switching applications. Furthermore, its robust design and wide operating temperature range make it suitable for use in harsh environments.

Due to its high input impedance, low power consumption and fast switching capabilities, the ipp60r380e6xksa1 is often used in power converters, motor drives, and electrostatic discharge protection applications. Additionally, its low on-resistance makes it an excellent choice for applications requiring a high degree of efficiency. Its compact size makes it an ideal choice for applications where space is at a premium.

The ipp60r380e6xksa1 is a highly reliable and efficient single FET, perfect for a range of applications including power conversion, motor control, and electrostatic discharge protection. Its compact size, high input impedance, and fast switching capabilities make it an ideal device for many applications. It is suitable for use in a wide variety of industries, from automotive to consumer electronics, and is available in various packages for different applications.

The specific data is subject to PDF, and the above content is for reference

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