IPP60R170CFD7XKSA1

IPP60R170CFD7XKSA1 Application Field and Working Principle

The IPP60R170CFD7XKSA1 is a productivity-enhancing Si-MOS-FET from Infineon Technologies, designed for intermediate power applications. It is a next-generation, high-performance N-channel MOS-FET for power conversion and driving applications, designed with advanced technologies. It features wide area covered gate structure and optimized packaging technique, realizing the quickest switching speed and pleasing performance. The device has a rated current of 170A, low on-resistance, high-side and low-side Rds(on) of 0.5? and 0.2? respectively at VGS of 10 V.

Applications

The family of the IPP60R170CFD7XKSA1 is intended for use in various types of electronic applications, such as power converters, motor control, consumer and industrial appliances, automotive, communications and computer systems. Specifically, it is suitable for medium power applications such as discrete dc-dc synchronous rectification or buck converters, automotive Class 2 or Class 3 inverters, mini-inverters, and half-bridge or bridge converters.

Working Principle

The IPP60R170CFD7XKSA1 is a high-efficient single N-Channel MOSFET that allows the optimization of switching systems by its fast switching performance, low losses, low gate charge and low output capacitance. The main operating principle of this MOSFET is based on the depletion mode of operation. It has a wide gate-source controlled depletion region of the source region-insulator-drain (SID) structure on an N-type body. When voltage is applied to its gate p-n junction, majority carriers (electrons) will diffuse from the negative terminal to positive terminal. As the electrons are repelled from the source, the channel between the source and drain will be depleted.

Moreover, the wide area covered gate structure of the MOSFET enables greater control capability and therefore the quickest switching speed among all device families. Its low on-resistance and low gate charge significantly reduce the switching losses and power losses, improving power efficiency. The device features optimized packaging technique and advanced die technology. It is also characterized by low gate charge and low output capacitance, as well as superior dv/dt resistance and avalanche capability.

Conclusion

The IPP60R170CFD7XKSA1 is a next-generation, high-performance N-channel MOS-FET. It features wide area covered gate structure, optimized packaging technique, low on-resistance and gate charge, as well as superior dv/dt resistance and avalanche capability, making it suitable for power converters, motor control, and many other types of electronic applications.