IPP65R074C6XKSA1

The IPP65R074C6XKSA1 is a high voltage, rugged N-Channel MOSFET with a very low on-state resistance. It is ideal for applications that require high precision and low power consumption. The device is a single-gate MOSFET, which means that the load current is controlled by a single gate, as opposed to a dual-gate MOSFET, where the load current is controlled by two gates. The device is rated for a drain-to-source voltage of 75 Volts and a drain current of 11 A.

The major advantages of the IPP65R074C6XKSA1 are its high breakdown voltage and low on-resistance. This makes the device ideal for applications that require a large voltage swing and low power consumption. The device also has a temperature coefficient of 0.06ohm / K and can be operated over a temperature range of -55 ° C to 175 ° C.

The IPP65R074C6XKSA1 has a wide range of application fields, such as power switching devices in switch mode power supplies, motor controls, and DC-to-DC converters. It is also used in motor drives, in switch gear devices, and in high voltage industrial applications. This MOSFET can also be used as a series pass element in current limiting circuits and as a square wave generator.

The working principle of this MOSFET is based on the “channel effect” or Electrostatic Modulation of the conductivity of the channel formed between the drain and the source by the application of a gate voltage. The gate voltage creates an electrostatic field in the channel, which increases the conductivity of the channel and thus reduces the drain-to-source resistance. The drain-source resistance is proportional to the gate voltage. When the gate voltage is increased, the drain-source resistance also increases, and vice versa. This makes the device an ideal choice for applications where a precise control of the current is required.

In summary, the IPP65R074C6XKSA1 is a high voltage and low on-state resistance MOSFET with a wide range of applications. It has a high breakdown voltage and a low temperature coefficient, making it suitable for applications that require precision and low power consumption. Its working principle is based on the “channel effect” or Electrostatic Modulation of the conductivity of the channel formed between the drain and the source by the application of a gate voltage.