| Allicdata Part #: | IPP65R099C6XKSA1-ND |
| Manufacturer Part#: |
IPP65R099C6XKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V 38A TO220 |
| More Detail: | N-Channel 650V 38A (Tc) 278W (Tc) Through Hole PG-... |
| DataSheet: |  IPP65R099C6XKSA1 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 1.2mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 278W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2780pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 99 mOhm @ 12.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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IPP65R099C6XKSA1 is a type of field effect transistor (FET) which falls under the single subcategory. This device is often used as a switch and is designed to provide low threshold voltage. It contains a single N-channel enhancement type MOSFET which is great for applications where high switching speed is required.A field effect transistor, commonly abbreviated as FET, is a type of transistor that uses an electric field to control the movement of electrons in the device. The FET operates by applying a voltage across its gate-source, or gate-drain, terminals. This creates an electric field which causes a current to flow between the drain and source terminals.The IPP65R099C6XKSA1 is a single N-channel enhancement type MOSFET. The “N-channel” refers to the type of charge carriers which are used to conduct current through the device. N-channel devices use electrons as the charge carriers, while P-channel devices use holes. The “enhanecment type” refers to the threshold voltage of the device, which is the gate-source voltage required to turn the device on. Enhancement type devices have a low threshold voltage (typically 0-2V), while depletion type devices have a high threshold voltage (typically 8-12V).In operation, the IPP65R099C6XKSA1 is used as a switch. When a voltage is applied to the gate terminal the source-drain current will flow through the device. This is because the application of the gate voltage creates an electric field that attracts electrons. This repels holes which reduces the resistance between the source and drain terminals of the device. Since the threshold voltage of this device is low, the device will turn on at relatively low gate-source voltages, allowing for fast switching.This type of device has several advantages, such as low power dissipation and low threshold voltage. Additionally, these types of switches are symmetrical, meaning that the same characteristics can be applied for either going from an “on” state to an “off” state, or the other way around. This makes the IPP65R099C6XKSA1 an ideal device for applications where a fast switching speed is required. Due to its characteristics, the IPP65R099C6XKSA1 is commonly used in a wide array of applications. These include power management applications such as DC/DC converters, power supplies, and motor control, as well as switching in high frequency RF communications, and low frequency signals. Additionally, the device is often used in high power switching applications such as motor drivers and servo systems, as well as low-current applications such as current sensing.Overall, the IPP65R099C6XKSA1 is a single N-channel enhancement type MOSFET which is designed to provide low threshold voltage and fast switching speed. It has several advantages over other types of FETs and is used in a wide array of applications.The specific data is subject to PDF, and the above content is for reference
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