IPP60R950C6XKSA1 Allicdata Electronics
Allicdata Part #:

IPP60R950C6XKSA1-ND

Manufacturer Part#:

IPP60R950C6XKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 4.4A TO220
More Detail: N-Channel 600V 4.4A (Tc) 37W (Tc) Through Hole PG-...
DataSheet: IPP60R950C6XKSA1 datasheetIPP60R950C6XKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 37W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPP60R950C6XKSA1 is a field effect transistor (FET) designed specifically to be used as a component in power-supplying applications and other applications requiring high-speed switching. It is a high-power, single-channel device designed specifically to be used with DC input signals. This component allows the user to easily isolate a DC signal from the high-voltage signal in a power system and to regulate or adjust the power levels in the power system.

The IPP60R950C6XKSA1 features a built-in field plate that offers excellent thermal stability and high-speed switching characteristics. This component also features an adjustable over-current protection, which limits the current to the output in the event of a short circuit. The component also features fast switching speeds, allowing it to provide fast response time to output changes.

The IPP60R950C6XKSA1 features a high on-resistance and a low threshold voltage. It shows good characteristics in the area of leakages, allowing the user to easily adjust the power levels and to maintain a constant output power. This component is designed to provide superior performance and long life, making it a suitable choice for applications requiring high-speed switching.

The working principle of the IPP60R950C6XKSA1 is based on the semiconductor, which consists of two semiconductor layers: the source region and the drain region. A voltage is applied to the gate of the transistor, which is located between the two regions and controls the current flowing through the device. When a positive voltage is applied to the gate, electrons are injected into the device and they flow through the device, creating a low resistance path between the source and the drain. When the gate voltage is reversed, the density of electrons falls, allowing current to flow from the drain to the source, creating a high-resistance path.

The IPP60R950C6XKSA1 is commonly used in power supplies, motor control, and other high-speed switching applications. It is an ideal component for applications which require fast switching, high current tolerance, and high on-resistance. This component is also suitable for applications where accuracy and speed is important. In addition, this component can be used to provide efficient power conversion and regulation.

In conclusion, the IPP60R950C6XKSA1 is a field effect transistor designed specifically to be used in power-supplying applications and other applications requiring high-speed switching. It has a built-in field plate that offers excellent thermal stability and high-speed switching characteristics. It also has an adjustable over-current protection and fast switching speeds. The working principle of the component is based on the semiconductor, which consists of two semiconductor layers. This component is commonly used in power supplies, motor control, and other high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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