| Allicdata Part #: | IPP60R280E6XKSA1-ND |
| Manufacturer Part#: |
IPP60R280E6XKSA1 |
| Price: | $ 1.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 600V 13.8A TO220 |
| More Detail: | N-Channel 600V 13.8A (Tc) 104W (Tc) Through Hole P... |
| DataSheet: | IPP60R280E6XKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 1.03293 |
| Vgs(th) (Max) @ Id: | 3.5V @ 430µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 280 mOhm @ 6.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13.8A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IPP60R280E6XKSA1 is a single FET power MOSFET, designed and produced by Infineon Technologies. It is an integrated circuit (IC) transistor, so it is commonly referred to as an IC. FET stands for Field Effect Transistor. A FET is a three-terminal device composed of a source, gate, and drain. This particular device has an RdsOn of 0.29ohms, a maximum drain current rating of 60A, and a built-in body diode for reverse polarity applications.
Overview
The Infineon IPP60R280E6XKSA1 is a single FET power MOSFET with a breakdown voltage of 280 volts. It has a maximum junction temperature rating of 175 degrees Celsius and can be used in a variety of applications. These applications include powering a computer, powering a car stereo, powering a stereo amplifier, or any other device that requires a large amount of power but must be kept relatively cool.
Application Field
The IPP60R280E6XKSA1 is used in a wide range of applications across multiple industries. The device is used in automotive, medical, industrial, lighting, and consumer applications. It is also frequently used in power conversion and motor drive designs. The device provides superior current handling capability, exceptional on resistance and power dissipation, and superior high-speed switching performance.
Working Principle
The working principle of the IPP60R280E6XKSA1 is similar to other MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). It utilizes the principle of field effect, which is a phenomenon where a voltage applied to the gate of the device will cause the size of the channel to the source and the drain to change. This changing of the channel size will allow for current to pass through the channel, depending on the voltage applied to the gate. The higher the voltage applied to the gate, the more current is allowed through the channel. This is what allows the device to switch high power very quickly.
Conclusion
The IPP60R280E6XKSA1 is a single FET power MOSFET device with an RdsOn of 0.29ohms, a maximum drain current rating of 60A, and a breakdown voltage of 280 volts. It can be used in a variety of applications, including automotive, medical, industrial, lighting, consumer, and power conversion and motor drive designs. The working principle of the IPP60R280E6XKSA1 is based on the field effect phenomenon, where a voltage applied to the gate of the device will cause the size of the channel to the source and the drain to change in order to allow for higher current levels.
The specific data is subject to PDF, and the above content is for reference
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IPP60R280E6XKSA1 Datasheet/PDF