Allicdata Part #: | IPP60R099CPXKSA1-ND |
Manufacturer Part#: |
IPP60R099CPXKSA1 |
Price: | $ 5.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 31A TO-220 |
More Detail: | N-Channel 650V 31A (Tc) 255W (Tc) Through Hole PG-... |
DataSheet: | IPP60R099CPXKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 5.34870 |
10 +: | $ 4.81446 |
100 +: | $ 3.95835 |
500 +: | $ 3.31648 |
1000 +: | $ 2.88855 |
Vgs(th) (Max) @ Id: | 3.5V @ 1.2mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 255W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 99 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The IPP60R099CPXKSA1 is a high-performing, low-cost single N-type Enhancement-Mode Vertical DMOSFET transistor that is used in low-voltage (up to 100V) switching applications. It has a breakdown voltage of 60V, a dielectric constant of 6.3, a power dissipation of 0.25W and an operating temperature range of -55°C to 175°C. This transistor is well-suited for power-switching applications in compact or mobile components, as well as smaller electronic devices.
This device is constructed with an N-type vertical double-diffused transistor that has a very low on-resistance (typically about 0.028 ohms). This is made possible through the design of the transistor, which consists of multiple layers of silicon. The top layer is a lightly-doped N-region that acts as the source and drain regions. The middle layer is a heavily-doped region that serves as the gate, and the bottom layer is an epitaxial region that serves as the body. This arrangement allows for vertical current flow, which is where the low on-resistance of the device comes from.
As a vertical DMOSFET, the IPP60R099CPXKSA1 can be used for both low-side and high-side switching applications. In low-side switching applications, the transistor is used to control current to the load from the power source. The source and drain pins of the transistor are connected to the power source and load respectively, with the gate being connected to the logic signal. This allows the transistor to act as an electronic switch, opening and closing as the logic signal changes. In high-side switching applications, the transistor is connected in reverse, with the drain pin being connected to the power source and the source pin being connected to the load. The gate is again connected to the logic signal, allowing the transistor to control current from the power source to the load.
The IPP60R099CPXKSA1 is also ideal for automotive applications as it has built-in protection against short-circuits and over-heating, as well as a low drain-source capacitance that allows for high-frequency switching. This makes it ideal for quickly switching loads in rigs, robotics, and other 5V powered devices. This combined with its reliable performance makes it a great choice for automotive and low-voltage switching applications.
The specific data is subject to PDF, and the above content is for reference
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