| Allicdata Part #: | IPP60R190C6XKSA1-ND |
| Manufacturer Part#: |
IPP60R190C6XKSA1 |
| Price: | $ 2.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 600V 20.2A TO220 |
| More Detail: | N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole P... |
| DataSheet: | IPP60R190C6XKSA1 Datasheet/PDF |
| Quantity: | 1300 |
| 1 +: | $ 2.36000 |
| 10 +: | $ 2.28920 |
| 100 +: | $ 2.24200 |
| 1000 +: | $ 2.19480 |
| 10000 +: | $ 2.12400 |
| Vgs(th) (Max) @ Id: | 3.5V @ 630µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 151W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20.2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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The IPP60R190C6XKSA1 is part of a range of insulated gate bipolar transistors (IGBTs) from Infineon Technologies. It is a single power transistor that is used for a variety of applications, including high speed switching, power conversion and high power audio amplifiers. In this article, we will discuss the application field and working principle of the IPP60R190C6XKSA1.
Application Field
The IPP60R190C6XKSA1 is a 600 V N-Channel IGBT that can be used in a variety of applications. It is suitable for a wide range of high power switching and control applications such as motor drives, DC-DC converters, and power supplies. It can be used in automotive, industrial, and consumer electronics. The device is well-suited for use in high-output audio amplifiers and power switching applications.
Working Principle
The IPP60R190C6XKSA1 is an N-Channel IGBT, which means it consists of an N-type MOSFET (metal-oxide semiconductor field-effect transistor) and an insulated gate bipolar transistor (IGBT). When voltage is applied to the gate of the device, the current flows from the collector to the emitter of the IGBT. The current flow is between the collector and the source, so it is reversible and can be switched on or off by changing the voltage applied to the gate. This makes the device suitable for a variety of applications, because it can be easily switched on and off, thus providing control over the current flow.
The IGBT has a low collector-emitter saturation voltage and is capable of switching currents at high speed, making it ideal for high power applications. The device is also capable of sustaining very high voltages, making it suitable for a variety of safety-critical applications. The IPP60R190C6XKSA1 is capable of controlling large currents and high voltages with fast switching speeds, making it an ideal choice for many high power applications.
The IPP60R190C6XKSA1 is a single power transistor for a variety of applications. It is an N-Channel IGBT with a low collector-emitter saturation voltage. The device is capable of controlling large currents and high voltages with fast switching speeds, making it a suitable choice for a variety of applications, including high speed switching, power conversion, high power audio amplifiers, and other high power applications.
The specific data is subject to PDF, and the above content is for reference
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IPP60R190C6XKSA1 Datasheet/PDF