IPP65R110CFDAAKSA1

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The IPP65R110CFDAAKSA1 is a high-performance insulated-gate power MOSFET. It is one of the most versatile products in the portfolio of Insulated Gate Bipolar Transistors (IGBTs). With its high power capability, low on-resistance, and quick switching times, this MOSFET is ideal for a wide range of automotive, industrial and consumer applications.

The IPP65R110CFDAAKSA1 MOSFET is one of the few of its kind that can be used in a wide range of applications, including motor control, power inverters, power switches and switches for high-speed switching. Due to its high performance and wide range of uses, the device is highly employed in various industrial and automotive applications.

This MOSFET is based on the well-known CMOS technology. It is designed to operate in junction temperature environments that range from -55 to 175°C. The IPP65R110CFDAAKSA1 also meets all relevant RoHS (Restriction of Hazardous Substances) and REACH (Registration, Evaluation, Authorization and Restriction of Chemicals) requirements.

The IPP65R110CFDAAKSA1 has a maximum power dissipation rating of 95 W, which enables a wide range of maximum on-resistance values from 0.290 to 4.100 Ω. It is capable of operating at frequencies up to 500 kHz and can withstand voltages up to 700 V. Furthermore, its enhanced current commutation enables faster switching times and reduces switching losses.

To ensure a high level of reliability and performance, the IPP65R110CFDAAKSA1 has been designed with an advanced packaging technology. The device is encapsulated in an industry-standard package made of thermally conductive dielectric materials, and its internal drain-source temperature is kept up to 8°C below junction temperature.

The IPP65R110CFDAAKSA1\'s working principle is based on the voltages applied at its gates and sources. When a control voltage is applied to the gates, it initiates the flow of electrons between the drain and source contacts thus enabling current to flow through the MOSFET. The body-drain and body-gate voltages control the device’s on and off states, thus determining its conduction mode.

The device\'s output characteristics are determined by the gate-to-source voltage, which creates a continuous electric field between its gates and drain, thus controlling the flow of electrons. Additionally, the gate-to-channel capacitance also contributes to the device\'s output characteristics, as it disrupts the flow of electrons when a given voltage is applied.

In conclusion, the IPP65R110CFDAAKSA1 is a highly capable, versatile and reliable IGTF that can be used in a multitude of applications. Its high power capability, low on-resistance, and reduced switching losses make it ideal for use across a variety of consumer, industrial and automotive use cases. Additionally, its advanced packaging technology enables high-performance at high frequencies and a wide range of temperatures.

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