IPP80N04S306AKSA1

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IPP80N04S306AKSA1 is a single-out of an high-voltage, 30V switching type trench N-channelMOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) made with a high-cell density, DMOS (Double-diffused Metal-Oxide Semiconductor) process. It is a preferred cost-effective solution for high-voltage, 30V switching applications. This MOSFET is capable of driving large currents and comes with a high breakdown voltage rating of –30 V Drain-Source Voltage. It has a fast switching speed and ultra-low input and output capacitance, making it suitable for use in very high frequency switching circuits.

The IPP80N04S306AKSA1 is typically used in power management systems, voltage regulator modules, motor control, audio and lighting controllers, gate drivers, and switching power supplies. It is also used for power IC development and electric vehicle applications, such as electric lawn mowers and electric bicycles. The device is available with a center island and a BGA package, allowing for easy mounting and increased thermal efficiency.

The IPP80N04S306AKSA1 is a type of MOSFET that operates using the principle of the Metal-Oxide-Semiconductor (MOS) effect. In this type of device, the source and drain regions of the transistor are insulated from each other by an insulating layer of silicon dioxide (SiO2). This layer acts as a gate, allowing carriers to move in either direction when a voltage is applied across the source and drain regions. By controlling the voltage applied to the gate, a current flow can be controlled in either direction between the source and drain regions. The voltage applied to the gate is known as the Gate-Source Voltage, or VGS. The current flow between the source and drain regions is proportional to the VGS, meaning that the current flow can be adjusted by varying the VGS.

The IPP80N04S306AKSA1 is considered to be a low Vgs device, as it is designed to operate with only a few volts of Vgs. This low Vgs provides numerous benefits, such as improved switching performance, lower power consumption, and improved noise immunity. It also reduces the on-state resistance of the device, allowing it to drive larger currents. The device also features very high speed switching and lower temperature operation, making it ideal for applications that require high-speed switching or low-power operation.

The IPP80N04S306AKSA1 is an excellent choice for many power management and voltage regulation applications, due to its low Vgs capabilities, high switching speed, and high output current capability. Additionally, its low cost and high efficiency make it an attractive solution for general-purpose electronic systems or applications. The device is suitable for use in both commercial and automotive applications, and offers a cost-effective solution for these applications.

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