IRF3000PBF Allicdata Electronics
Allicdata Part #:

IRF3000PBF-ND

Manufacturer Part#:

IRF3000PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 300V 1.6A 8-SOIC
More Detail: N-Channel 300V 1.6A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF3000PBF datasheetIRF3000PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 400 mOhm @ 960mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF3000PBF is a single-channel, ultra-low on-resistance Field Effect Transistor (FET) that offers excellent performance in a broad range of applications. It is ideal for motor drive, switching and high-current switching applications.

The IRF3000PBF is capable of withstanding very high voltages and currents and is used in a variety of applications, from low-power electronics to high-power industrial applications. It is also well-suited for high frequency switching and control applications.

The IRF3000PBF is a P-channel MOSFET, meaning it is a type of FET which has four terminals, typically designated as gate, drain, source, and body. The gate terminal can be used to control the flow of electrons between drain and source. By applying a voltage to the gate terminal, electrons can be attracted or repelled from the gate, allowing the device to act as a switch or amplifier.

The IRF3000PBF works by using an electric field to create an inversion layer, or channel, between the gate and the source. This creates a conducting path between them which allows electrons to flow from the source to the drain. The magnitude of the current that can be flow is dependant on the applied voltage, as well as on the width of the channel.

In order to increase its performance, the IRF3000PBF uses shallow trench isolation (STI). STI is a technique that uses shallow trenches to separate the substrate and the insulator layer of the transistor, reducing the interference between the elements that are interacting.

The IRF3000PBF is a high performance device, offering low on-resistance and low power consumption. It is ideal for applications that require precision switching and high current control. It can be used in motor drive and switching applications, such as motor controls, power supplies, and computers. It is also suitable for data and communication applications, including multiplexers, regulators, and line drivers. The IRF3000PBF is also a great choice for audio applications, as it provides low noise and distortion for high fidelity audio systems.

The IRF3000PBF is a versatile and reliable device, offering excellent performance and ease of use in a range of applications that require low power and high speed switching. Its very low on-resistance and high-current capabilities are ideal for switching and control applications, and its shallow trench isolation helps to greatly improve its performance.

The specific data is subject to PDF, and the above content is for reference

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