IRF3205STRLPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3247pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	146nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8 mOhm @ 62A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The IRF3205STRLPBF is an advanced 55V single N‐channel MOSFET, specifically designed for high‐current switching applications. It is manufactured using advanced field‐stop SuperMESH trench gate MOSFET technology, which significantly reduces forward and gate charge as well as switching losses while providing high breakdown voltage and a low on‐state resistance. The reduced gate charge and its low capacitance design make the IRF3205STRLPBF a good choice for high frequency switching applications.
The IRF3205STRLPBF can be used in a variety of applications, such as:

• Power supplies
• Battery chargers
• DC motors
• Truck lights
• Charged device protection
• DC/DC converters
• Solar energy systems

The IRF3205STRLPBF is designed to operate with excellent thermal performance and high reliability. Its drain‐source voltage, VDSS, is specified at 55V, and its drain current capability is rated at 30A (Tj = 125°C). It has a maximum drain‐source on‐state resistance, RDS(on), of 6.8mΩ @VGS= 10V and 8.0mΩ @VGS= 4.5V. The FET is available in a compact and easily mountable, surface mount power package.
The operation of an N‐channel MOSFET can be explained in terms of the movement of electric charges. In N‐channel MOSFETs by definition n (negative) type material is placed below a layer of p (positive) type material. Electric charge carriers, such as electrons, are allowed to move freely through the n‐type channel. The channel is controlled by a voltage applied to the MOSFET Gate terminal. More precisely, when negative electric charges are applied to the gate terminal, an electric field is created and the electrons are drawn towards the positive charges, forming an “inversion layer” in the n‐type region. The electrons in the inversion layer are the current carriers in the MOSFET “channel”. The more negative the gate voltage, the larger the inversion layer. Hence, the more negative the gate voltage, the greater the current flowing through the MOSFET.
The IRF3205STRLPBF also features additional characteristics that promote superior performance in switching applications, including a low gate to source voltage (VGS) threshold, low input gate capacitance, gate to source charge, and drain to source capacitance. The combination of these characteristics enables the IRF3205STRLPBF to operate with high speed and high efficiency.In summary, the IRF3205STRLPBF is an advanced 55V single N‐channel MOSFET designed for high‐current switching applications. It is manufactured using advanced SuperMESH trench gate MOSFET technology, which reduces gate charge and switching losses. The FET offers excellent thermal performance and high reliability, and is suitable for a variety of applications such as power supplies, battery chargers, DC motors, charged device protection, and DC/DC converters. The IRF3205STRLPBF also features a low VGS threshold, low input gate capacitance, gate to source charge and drain to source capacitance, enabling it to operate with high speed and efficiency.

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