| Allicdata Part #: | IRF3515S-ND |
| Manufacturer Part#: |
IRF3515S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 41A D2PAK |
| More Detail: | N-Channel 150V 41A (Tc) 200W (Tc) Surface Mount D2... |
| DataSheet: | IRF3515S Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2260pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 45 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 41A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF3515S is a type of single-effect transistor of the field-effect variety, often known as a MOSFET (metal-oxide semiconductor field-effect transistor). It is an important part of the electrical process, used in many devices and applications, and is suitable for a wide range of use.
The IRF3515S is one of the latest forms of the highly efficient MOSFET, which has a simple structure and construction. It is manufactured in a modular format, that is, it comes in a single, integrated package that can easily be connected to a printed circuit board (PCB) or other compatible device. The IRF3515S is considered to be an on-chip MOSFET, meaning that it is able to control the flow of current through its gates without the need for external components.
The transistor is integrated with a single, large power transistor, known as the main FET. The main FET is responsible for controlling the current. This is an important feature of the device, as the current it is able to control and the rate at which it is able to switch between different states is directly influenced by the size and layout of the FET. This feature also makes the IRF3515S ideal for high-speed applications and for devices that require high levels of power.
The IRF3515S is particularly well-suited for linear voltage regulators, as it is able to control large amounts of power and at high switching speeds. It is also the ideal choice for sensing circuits that require constant monitoring, such as automotive applications, for example. This is due to the device\'s ability to accurately monitor and switch between different states in order to ensure proper operation.
The IRF3515S also has a wide range of applications in the field of switching and directing power, as it can be used to switch and direct large amounts of current in both high and low voltage applications. It is also advantageous in that it has a wide variety of protection features, such as ESD (electrical static discharge) protection and thermal shutdown, allowing it to be used in a more reliable and safe environment.
In terms of working principle, the IRF3515S has a simple set-up. When its gate voltage is increased, current is allowed to flow through the device. The current flowing through the device is then used to cause a voltage drop across the device, which subsequently leads to a change in switch state. When the switch state is changed, the device is then able to control the current through its gates.
The IRF3515S is an ideal choice for a wide range of applications due to its simple structure and construction, combined with its wide range of uses. In addition, its protection features make it reliable and safe to use in both industrial and home settings. With its versatile range of uses and protection features, the IRF3515S is one of the most widely used MOSFET transistors available on the market today.
The specific data is subject to PDF, and the above content is for reference
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IRF3515S Datasheet/PDF