| Allicdata Part #: | IRF3706-ND |
| Manufacturer Part#: |
IRF3706 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 77A TO-220AB |
| More Detail: | N-Channel 20V 77A (Tc) 88W (Tc) Through Hole TO-22... |
| DataSheet: | IRF3706 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 88W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 77A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF3706 is an insulated gate field-effect transistor (IGFET). It is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that uses an insulated gate to control the flow of current between source and drain terminals. The IRF3706 is widely used in power management applications due to its low resistance, high frequency operation, low on-state resistance, and low capacitance.
The IRF3706 has a gate-drain breakdown voltage rating of 400 volts heavily utilized in industrial, automotive and consumer applications. Its Vds at 175°C has been marked as 200V, with a maximum continuous drain current at 175°C rated at 110A. It is built using N-channel depletion mode MOSFET process. When the gate-source voltage is greater than the threshold voltage, the IRF3706 will turn on with a high input impedance and low output impedance.
The working principle of the IRF3706 is based on the phenomenon of electron tunneling. Electron tunneling occurs when electrons are able to move through an insulator barrier, due to the presence of a built-in electrostatic field that facilitates current flow. The built-in electrostatic field is generated by the MOSFET structure and is created when a voltage is applied to the gate. The electrons are attracted to the gate, and pass through the insulator barrier to move from the source to the drain.
The IRF3706 is widely used in low voltage, high frequency applications such as switching power supplies, motor control, DC-DC converters, DC-AC inverters, and load switch circuits. Its low gate resistance reduces switching losses and thereby increases efficiency. Its low gate capacitance reduces the turn-on and turn-off times and increases the switching frequency. In addition, the IRF3706 can be used in switching application with high current as it has a110A/175°C continuous drain current.
The IRF3706 is therefore an ideal choice for high current and high frequency applications. With its low on-state resistance, low gate capacitance, and low gate-drain breakdown voltage, the IRF3706 is an excellent choice for power management applications where efficiency and accuracy are of the utmost importance.
The specific data is subject to PDF, and the above content is for reference
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| IRF3711SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 110A D2PA... |
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IRF3706 Datasheet/PDF