IRF3706SPBF Allicdata Electronics
Allicdata Part #:

IRF3706SPBF-ND

Manufacturer Part#:

IRF3706SPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 77A D2PAK
More Detail: N-Channel 20V 77A (Tc) 88W (Tc) Surface Mount D2PA...
DataSheet: IRF3706SPBF datasheetIRF3706SPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF3706PBF is a single high voltage, low side Mosfet which has a drain output current of 110A. It can be found in a variety of applications that require high current and a wide operating temperature range up to 175C. It is a vertical drain type Mosfet which is designed for high efficiency and very low gate charge compared to other Mosfets with similar specifications.

The IRF3706PBF can be used in a variety of circuits, such as motor control, DC/DC converters, switching power supplies, and motor speed control circuits. It can also be used as a pass element in power switch applications. Its very low on-resistance and maximum operating voltage of 400V makes it suitable for high efficiency power applications.

The IRF3706PBF is based on a low power CMOS process that enables low Vds(on) with a high gain. It has parasitic N-channel and P-channel MOSFETs, which offer a low on-state resistance, pulse shaping, inrush current protection, switching frequency optimization, and active dropout protection. It also has built-in protection diodes to ensure proper operation in various switching scenarios.

In terms of working principle, the IRF3706PBF is based on a p-channel enhancement mode (also known as depletion mode) MOSFET. These devices have a structure similar to that of a bipolar transistor, but with the active region replaced by a thin insulating layer (known as the gate oxide layer). This layer controls the flow of current by allowing or blocking the flow of electrons, depending on the voltage applied to the gate. When the voltage is high enough to overcome the threshold voltage, electrons are allowed to flow and the device is said to be “on”. When the voltage is below the threshold voltage, the device is said to be “off”.

Since the IRF3706PBF is based on p-channel, the “on” voltage is usually between 4 and 6 volts. This voltage is called the “gate-source voltage”, and it is applied to the gate terminal of the MOSFET in order to turn the device “on”. By changing the gate-source voltage, the resistance between the drain and source terminals can be controlled and regulated. This enables the device to be used as a switch in many circuit applications.

The IRF3706PBF is a versatile and reliable Mosfet suitable for a wide range of applications. Its very low on-resistance, maximum operating voltage, and wide operating temperature range make it an ideal choice for high performance and high efficiency power applications. Additionally, its built-in protection diodes give it a level of protection against high voltage and current transients, allowing it to be used in more demanding applications.

The specific data is subject to PDF, and the above content is for reference

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