IRF3707STRRPBF Allicdata Electronics
Allicdata Part #:

IRF3707STRRPBF-ND

Manufacturer Part#:

IRF3707STRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 62A D2PAK
More Detail: N-Channel 30V 62A (Tc) 87W (Tc) Surface Mount D2PA...
DataSheet: IRF3707STRRPBF datasheetIRF3707STRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 87W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF3707STRRPBF is a N-Channel MOSFET with outstanding performance, it offers unbeatable combination of low on-resistance, fast switching speed and low gate charge. With performance and dimensions being reduced to the smallest, this MOSFET is suitable for industry, communication and telecommunication, as well as automotive application.

The main application field and working principle of IRF3707STRRPBF can be classified into various groups, including but not limited to, motor control, power conversion, and power multiplexing. In particular, it is particularly useful in motor control applications, where it can provide fast switching, high electrical isolation, and precise control.

The main working principle involves controlling the electric current flow between the source and drain points. The IRF3707STRRPBF utilizes MOSFET high electron mobility for fast switching, high power handling capability, low voltage drop and virtually no switching losses. The source electrode is connected to the gate input terminal and the drain is connected to the output, which is regulated by the voltage of the gate. During operation, a positive voltage signal is applied to the gate which then creates an electric field between the source and the drain. This electric field forces electrons to move from the source to the drain, enabling current to flow through the device.

In addition, the IRF3707STRRPBF can also be used in power switching applications. This is done by connecting the device to a power converter designed to convert AC power to DC power. The converter can be designed to adjust the output current of the MOSFET-based rectifier circuit by varying the voltage at the gate. This allows current control of the circuit, allowing for higher efficiency output.

The IRF3707STRRPBF also has other uses, such as its ability to be used as an amplifier. An amplifier is an electronic device that increases the power of an input signal. It can be used to increase the volume of an audio signal, improve the signal-to-noise ratio, or increase the gain of the signal being amplified. The property of the MOSFET to act as an amplifying device makes it an ideal choice for use in audio and other applications.

The IRF3707STRRPBF is also suitable for use in power multiplexing applications. This involves combining multiple signals together, either analog or digital, to create one composite signal. This is done to safeguard against data corruption or for better control over the multiple signals. The IRF3707STRRPBF acts as a multiplexer in these applications, enabling multiple signals to be combined into one.

As can be seen, the IRF3707STRRPBF offers a multitude of uses, making it a versatile and reliable device. It can be used in a variety of power switching, amplification and multiplexing applications, making it a preferred choice for many industrial and consumer applications. Its small size and low power consumption make it an ideal solution for applications where size and performance are critical.

The specific data is subject to PDF, and the above content is for reference

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