Allicdata Part #: | IRF3710LPBF-ND |
Manufacturer Part#: |
IRF3710LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 57A TO-262 |
More Detail: | N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-... |
DataSheet: | IRF3710LPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3130pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF3710LPBF is an advanced Metal Oxide Semiconductor Field Effect Transistor orMOSFET that is used in many applications related to power management. It was designed by International Rectifier and is one of the products in their IRF37xx series.The IRF3710LPBF has a P-Channel MOSFET design that allows for enhanced system performance in applications that require low on-resistance, small package size, and low power loss.
The IRF3710LPBF is mainly used in many power management applications, such as switched-mode power supplies, DC/DC power converters, and automotive systems. It is also used for many other applications where the high performance of this MOSFET is especially beneficial. The IRF3710LPBF is ideal for low-voltage circuit designs, low-power loss designs, and low-noise designs due to its wide operating temperature range.
The IRF3710LPBF is a single N-channel enhancement-mode power MOSFET.The MOSFET has a low gate threshold voltage and a low on-resistance which makes it ideal for use in power management applications. The device operates over an extended temperature range of -55°C to 175°C, making it perfect for automotive and industrial applications.
The IRF3710LPBF has several features that make it an attractive choice for many different applications. It has a low resistance rDS(ON) of 0.72Ω at VGS of 10V. This low resistance will result in a low power loss, making the MOSFET ideal for power management applications.Additionally, the device has a high break-down voltage of 25V and a maximum safe operating area of 58%. This allows for a reliable operating temperature without risking over-voltage or over-current issues.
The IRF3710LPBF also has a low gate capacitance of 48pF at 1V, which makes it highly suitable for switching applications. This low gate capacitance will reduce the amount of distortion produced by the device, making it ideal for audio and video switching applications. The device is also capable of handling high frequencies up to 1MHz, making it an ideal choice for high-speed applications.
The IRF3710LPBF is a valuable device for many power management and switching applications, due to its low resistance rDS(ON), high breakdown voltage, and low gate capacitance. The device is capable of operating over an extended temperature range, making it suitable for many automotive and industrial applications. The device is also capable of handling high frequencies, making it an ideal choice for audio and video switching applications.
The specific data is subject to PDF, and the above content is for reference
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