| Allicdata Part #: | IRF3710STRLPBFTR-ND |
| Manufacturer Part#: |
IRF3710STRLPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 57A D2PAK |
| More Detail: | N-Channel 100V 57A (Tc) 200W (Tc) Surface Mount D2... |
| DataSheet: | IRF3710STRLPBF Datasheet/PDF |
| Quantity: | 1600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3130pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 28A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRF3710STRLPBF is a metal oxide semiconductor field-effect transistor (MOSFET). This is a popular choice for a wide variety of applications, from consumer electronics to automotive applications, and is available in the form of a single device, which means there is no need for a circuit board or other additional components. It is commonly used for low-power applications, such as motor control and switching, as well as audio and video applications. This article will discuss the application field and working principle of IRF3710STRLPBF.
The IRF3710STRLPBF is an N-channel enhancement-mode power MOSFET. It has a 30-volt drain-source voltage, and a 6.5-volt gate-source voltage, offering both high performance and efficient energy transfer. In addition, it features a small gate capacitance, which allows it to switch quickly and reliably for high-speed operation. Because of its small size and light weight, IRF3710STRLPBF is well suited for a wide range of applications.
The IRF3710STRLPBF operates in enhancement-mode, meaning that it requires the gate-source voltage to be higher than the threshold voltage of the drain-source, in order to turn on the device. This is important to remember when using this transistor in a circuit, as the gate voltage needs to be kept high in order to keep the transistor in the on state. The gate-source leakage current is also low, meaning that the transistor will not draw excessive current while in the off state.
The most common application field of the IRF3710STRLPBF is power control, such as motor control. This transistor is ideal for motor control because it is able to switch quickly, allowing the motor to accelerate or decelerate smoothly and efficiently. The small gate capacitance also means that there is low power consumption as the transistor does not have to work hard to switch between the on and off states. It is also suitable for switching applications, such as audio and video. It is able to switch quickly and efficiently between the two states, with minimal distortion, making it suitable for high-quality video and audio.
The IRF3710STRLPBF is a powerful, reliable and efficient transistor, making it suitable for a wide range of applications. Its small size, low power consumption and fast switching make it a reliable choice for both power control and switching applications. It is common to see the IRF3710STRLPBF used in a variety of products and applications, ranging from consumer electronics to automotive applications.
The specific data is subject to PDF, and the above content is for reference
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IRF3710STRLPBF Datasheet/PDF