IRF3717TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRF3717PBFTR-ND |
Manufacturer Part#: |
IRF3717TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 20A 8-SOIC |
More Detail: | N-Channel 20V 20A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | IRF3717TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2890pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF3717TRPBF is a n-channel Power MOSFET produced by Infineon Technologies AG. Designed for high performance inverting and non-inverting applications, the device supports various combinations of load current and power rating. The IRF3717TRPBF has a V( drain-source) rating of 60V, a V(gate-source) rating of +/-20V, and a Pd of 115W. With its high density cell design, the device offers improved reliability, enhanced switching performance, and low gate charge.
The IRF3717TRPBF is a MOSFET, short for Metal Oxide Semiconductor Field-Effect Transistor, that operates in one of the two switching states: ON or OFF. A MOSFET is capable of amplifying a small voltage into a much larger one, making it ideal for switching applications. When a small amount of gate current is added, the MOSFET turns ON and can pass current from its drain to its source. When the gate current is removed, the MOSFET turns OFF and blocks the current from passing through.
The IRF3717TRPBF has an ON-resistance rating of 0.055 ohm. This means that the transistor can handle a wide range of currents without experiencing significant voltage drops. It comes in a Lead-Free RoHS-compliant 4-pin DPAK package and has an internal thermal shutdown feature and ESD protection. It has excellent noise immunity and fast switching speeds, making it ideal for various applications such as voltage regulator circuits, DC to DC converters, automotive switching, and audio amplifiers.
The IRF3717TRPBF is typically used in power supply and inverting applications. Its high voltage tolerance makes it suitable for high voltage applications such as solar inverters and line voltage supplies. In an inverter application, the transistor can be used to efficiently switch between two different voltages to produce an alternating current (AC) output. The transistor is also used in DC-to-DC converters to transfer energy from one voltage level to another. The ability to switch quickly and effectively makes the IRF3717TRPBF an important component in power control and motor control systems.
The IRF3717TRPBF is a reliable and energy-efficient MOSFET with a long life cycle. Its high current and power rating make it suitable for a wide range of applications. Its robust packaging and low on-resistance make it an efficient and cost-effective switch in power control and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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