IRF5210STRR

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	180nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	60 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF5210STRR is a single N-channel enhancement mode field effect transistor that is commonly used in low-voltage, fast and compact switching application circuits. It is built using highly advanced and latest technologies that make it more reliable and durable than its predecessors. This article discusses application field and working principle of this FET.

IRF5210STRR is a voltage-controlled device and is based on semiconductor materials such as silicon, germanium and GaN (Gallium nitride). It is designed and marked as EP (Enhanced Packaging) type to ensure that its connection to the leadframe is secured. IRF5210STRR is an enhancement mode device, meaning it is an off-state device when the voltage is low, and the current flows through it when the voltage is increased. This device has the ability to operate in various ranges of voltages, from -20V to -40V, allowing it to function properly in a wide range of applications.

The application field of this FET is vast, as it can be used for many purposes such as power supply control, voltage regulator control, motor control, signal switching and amplification. It is also suitable for use in high-speed switching application circuits. Furthermore, it can be used to construct circuits that require the use of an N-channel enhancement mode device for fast switching operation.

The working principle of the IRF5210STRR FET is based on the transfer of electrons between the source and drain terminals. When the gate voltage is low, the device is off and no current flows between the source and drain. As this voltage increases, it creates an electric field inside the channel, causing positive charges to flow from the source to the drain. The increasing current causes the voltage at the drain to increase, resulting in a voltage drop across the channel. This voltage drop creates a channel between the source and drain, allowing current to flow through the transistor.

Thus, IRF5210STRR is a voltage-controlled single N-channel enhancement mode field effect transistor that can be used for a variety of applications such as power supply control, voltage regulator control, motor control, signal switching and amplification. It is also suitable for use in high-speed switching application circuits. Its working principle is based on the transfer of electrons between the source and drain terminals.

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