IRF5210L Allicdata Electronics
Allicdata Part #:

IRF5210L-ND

Manufacturer Part#:

IRF5210L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 100V 40A TO-262
More Detail: P-Channel 100V 40A (Tc) 3.8W (Ta), 200W (Tc) Throu...
DataSheet: IRF5210L datasheetIRF5210L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF5210L is a single N-Channel HEXFET Power MOSFET from International Rectifier’s Power MOSFET product family. The device is designed to offer a fast switching and low on-resistance power transistor with high power and avalanche capability.

IRF5210L has three terminals - Gate, Source and Drain. The gate terminal is used to control the transfer of the electrons between the source and the drain. When the gate voltage is higher than the source voltage, then the electrons will flow from the source to the drain, allowing current to flow through the resistor. When the gate voltage is lower than the source, then the electrons will not flow and the resistor will be in a non-conductive state. The current that flows between the gate and the source is also referred to as the gate current and it is controlled by the gate voltage.

IRF5210L has a number of applications such as switching loads in power conversion circuits, power management devices, power supplies and motor control systems. It has low gate-source capacitance and low on-resistance making it ideal for high frequency switching applications. It is suitable for use in high-power circuits up to 1.4kW. Additionally, the device is capable of withstanding high voltages up to 25V and high peak current up to 5A.

The working principle of an IRF5210L is based on the MOSFET device structure. The device has an insulated gate which can be used to control the current flow between the source and the drain. The gate voltage is applied to the gate terminal and this voltage will control the current flow between the drain and the source. When the gate is high, then the current will flow between the drain and the source and when the gate is low, then the current will be blocked. The current flowing between the gate and the source is controlled by the gate voltage.

In summary, IRF5210L is a single N-Channel HEXFET Power MOSFET from International Rectifier’s Power MOSFET product family. It offers a fast switching and low on-resistance power transistor with high power and avalanche capability. It has a number of applications and is suitable for use in high-power circuits up to 1.4kW. It has an insulated gate which can be used to control the current flow between the source and the drain and the current flowing between the gate and the source is controlled by the gate voltage.

The specific data is subject to PDF, and the above content is for reference

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