Allicdata Part #: | IRF540A-ND |
Manufacturer Part#: |
IRF540A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 28A TO-220 |
More Detail: | N-Channel 100V 28A (Tc) 107W (Tc) Through Hole TO-... |
DataSheet: | IRF540A Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 25V |
Vgs (Max): | -- |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF540A is a N-channel metal-oxide-semiconductor field effect transistor (MOSFET) used for switching and amplified applications. It is rated for a drain current of up to 26 amperes and a drain-source voltage of 500 volts, making it suitable for use in a wide range of applications. The IRF540A is a single MOSFET, meaning it has one drain and source electrode. It is a type of field-effect transistor (FET) and is also known as an insulated-gate bipolar transistor (IGBT).
The IRF540A features an insulated gate structure, which makes it ideal for use in high power switching applications. The insulated gate structure isolates the gate from the drain and source, making it easier to control the current through the device. This isolation makes it possible to control the device with gate signals, which can be used to turn the device on and off quickly. As a result, the IRF540A is an excellent device for applications that require high-speed switching or amplification.
The basic operating principle of the IRF540A is similar to other types of FETs. The gate terminal is isolated from the source and drain, allowing it to operate independently of the other parts of the device. A gate voltage is applied to the gate, which produces an electrical field that attracts electrons from the source and into the channel region of the device. The result is a change in the resistance of the channel, allowing current to flow from the source to the drain. The higher the gate voltage, the higher the current through the device.
The IRF540A is an ideal device for applications such as power switching, motor control, and amplifier circuits. In motor control applications, the gate voltage is used to switch the motor on and off quickly and accurately, making it suitable for use in speed control applications. The device is also used in amplifier circuits, where it is able to amplify changes in the gate voltage and provide a large amount of power, making it suitable for audio amplifier applications. The device also works well as a switch in switched-mode power supplies and other types of power conversion applications, where it is able to quickly and accurately switch the power supply on and off.
The IRF540A is a highly versatile device and is used in a wide range of applications. Its insulated gate structure makes it ideal for high-power switching and amplifier applications, while its ability to amplify gate voltage makes it suitable for applications such as motor control, audio amplifiers, and power conversion. Its robust construction makes it suitable for use in a variety of environments, making it an excellent choice for designers looking for a reliable high-power switch or amplifier.
The specific data is subject to PDF, and the above content is for reference
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