
Allicdata Part #: | IRF5305STRLPBFTR-ND |
Manufacturer Part#: |
IRF5305STRLPBF |
Price: | $ 0.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 31A D2PAK |
More Detail: | P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.58000 |
10 +: | $ 0.56260 |
100 +: | $ 0.55100 |
1000 +: | $ 0.53940 |
10000 +: | $ 0.52200 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF5305STRLPBF is a type of insulated gate bipolar junction transistor (IGBT) that belongs to the Field Effect Transistor (FET) family. It is a single FET with the capacity to control high current flow without additional components.
IGBT transistors are predominantly used when the application requires high speed switching, high current and high switching rates. The IRF5305STRLPBF is ideal for applications that require low on-state resistance, fast switching speeds, and high frequency operation due to its advanced driver circuitry. It can be used in a variety of applications, including power conversion, motor control, UPS, solar powered systems, lighting, servo drives, and robotics.
The IRF5305STRLPBF is a four-terminal field effect transistor (FET) with a n-channel enhancement construction. It is designed to handle high current and voltage through resistive and inductive load, boasting an average on-state current rating of 25A. It has a maximum drain source voltage of 500V and an on-state resistance of 0.55mΩ. The transistor offers good switching speed, allowing it to handle high thermal performance with a low-noise switching operation.
The working principle of IRF5305STRLPBF is based on the DC parameters and biasing of the device. A gate voltage applied to an n-channel FET turns on the device and allows current to flow through the source and drain. The current then passes through the gate-source junction, which reduces the resistance of the channel and allows the transistor to be turned off. The source-drain voltage then controls the current output. The higher the gate voltage, the lower the current output. The source-drain resistance also determines the amount of current which can be controlled.
The versatility of the IRF5305STRLPBF transistor makes it ideal for a range of applications. It can be used to control high power switching, motor control, audio amplifiers, and inverters. It can be used in photovoltaic systems, LED lighting, HVAC, wind turbines, and other renewable energy applications.
The IRF5305STRLPBF is a valuable transistor to have in any electronics lab or consumer product, as it is reliable and can handle large current and voltage levels. It is a versatile and powerful FET that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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