IRF510STRRPBF Allicdata Electronics

IRF510STRRPBF Discrete Semiconductor Products

Allicdata Part #:

IRF510STRRPBFTR-ND

Manufacturer Part#:

IRF510STRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 5.6A D2PAK
More Detail: N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surfa...
DataSheet: IRF510STRRPBF datasheetIRF510STRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF510STRRPBF is a type of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) used in a variety of applications such as power management, voltage regulation, and audio/video processing. It belongs to the single field effect transistors. In this section, the application field and working principle of IRF510STRRPBF will be discussed.

Application Field

The IRF510STRRPBF is well-suited to be used in both digital and analog applications. It is known for its ability to switch very large currents. It is commonly used in dc-to-dc converters, high-density CPU package switching, and motor and solenoid control as well as audio/video signal processing. One of the more popular and innovative applications of the IRF510STRRPBF is its use in automotive electronic systems. The IRF510STRRPBF is designed to withstand the vibration and temperature spikes associated with automotive systems while still providing reliable operation.

The IRF510STRRPBF is also a great choice for applications in the industrial sector. When used in industrial systems, it is mainly used in applications that require high current and voltage levels, such as motor control, switching, and industrial automation. This popular transistor is also regularly used in process control and many other fields.

Working Principle

The working principle of the IRF510STRRPBF is based on the physical phenomenon of channel hot electron emission. The MOSFET structure consists of three layers of components, including a semiconductor substrate, a highly doped source, and a highly doped drain. A gate voltage is applied to the gate terminal of the IRF510STRRPBF, resulting in a potential barrier between the source and drain. When this gate voltage is greater than a certain threshold, the electrons are injected into the channel at a large number of locations and the channel hot electron emission occurs. The electrons then reach the source and drain, which leads to current flowing between source and drain and the transistor is turned on. Thus, the IRF510STRRPBF is able to switch high currents much like a vacuum tube.

In summary, the IRF510STRRPBF is a single field effect transistor designed for use in automotive and industrial applications. It is well-suited for applications requiring high current and voltage levels. It works by using the physical phenomenon of channel hot electron emission to switch high currents. The IRF510STRRPBF is an innovative and reliable transistor that has a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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