IRF5305STRRPBF Allicdata Electronics
Allicdata Part #:

IRF5305STRRPBF-ND

Manufacturer Part#:

IRF5305STRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 55V 31A D2PAK
More Detail: P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Surfac...
DataSheet: IRF5305STRRPBF datasheetIRF5305STRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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IRF5305STRRPBF Application Field and Working Principle

The IRF5305STRRPBF is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) specifically designed to provide superior performance and reliability. It is both an N-type and a P-type MOSFET and is used in many applications such as power management in automotive and industrial systems, power conversion, and switching.

The IRF5305STRRPBF is constructed from an insulated gate semiconductor, which is composed of a P-type and an N-type semiconductor layers along with an oxide layer with a gate control layer. The gate layer of the IRF5305STRRPBF acts as the input, allowing a voltage change to cause a current flow between the source and drain.

The working principle of the IRF5305STRRPBF is that, when a voltage is applied to the gate of the MOSFET, a thin layer of electrons (negative charge carriers) will accumulate at the interface between the oxide and gate layers. This accumulation of electrons causes an interior electric field which then causes the MOSFET to conduct. The electrons will then travel across the MOSFET and connect the source to the drain, allowing current to flow.

The IRF5305STRRPBF is used in a variety of applications and provides superior performance in a variety of environments. In automotive applications, the IRF5305STRRPBF is used to control and manage the power systems. This type of MOSFET is also used in industrial systems and power conversion as well as in switching operations. The IRF5305STRRPBF is also suitable for use in high-frequency devices, where it provides superior performance and reliability when compared to other types of MOSFETs.

The IRF5305STRRPBF is also used in audio and video applications such as amplifiers and recording devices. In audio applications, the IRF5305STRRPBF is used to amplify signals and provide superior sound reproduction. In video applications, the IRF5305STRRPBF is used to transmit a high-resolution video signal. The IRF5305STRRPBF can also be used to in various other applications such as inverters and converters and in low-power switching operations.

The IRF5305STRRPBF is an efficient MOSFET with lower resistance and power losses. Its low on-resistance, fast switching speeds, and superior voltage ratings make it ideal for a variety of applications in power management, switching, and converters. Its superior performance and reliability make it a popular choice for industrial and automotive systems, as well as for audio and video applications.

The specific data is subject to PDF, and the above content is for reference

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