Allicdata Part #: | IRF5305STRRPBF-ND |
Manufacturer Part#: |
IRF5305STRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 31A D2PAK |
More Detail: | P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Surfac... |
DataSheet: | IRF5305STRRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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IRF5305STRRPBF Application Field and Working Principle
The IRF5305STRRPBF is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) specifically designed to provide superior performance and reliability. It is both an N-type and a P-type MOSFET and is used in many applications such as power management in automotive and industrial systems, power conversion, and switching.
The IRF5305STRRPBF is constructed from an insulated gate semiconductor, which is composed of a P-type and an N-type semiconductor layers along with an oxide layer with a gate control layer. The gate layer of the IRF5305STRRPBF acts as the input, allowing a voltage change to cause a current flow between the source and drain.
The working principle of the IRF5305STRRPBF is that, when a voltage is applied to the gate of the MOSFET, a thin layer of electrons (negative charge carriers) will accumulate at the interface between the oxide and gate layers. This accumulation of electrons causes an interior electric field which then causes the MOSFET to conduct. The electrons will then travel across the MOSFET and connect the source to the drain, allowing current to flow.
The IRF5305STRRPBF is used in a variety of applications and provides superior performance in a variety of environments. In automotive applications, the IRF5305STRRPBF is used to control and manage the power systems. This type of MOSFET is also used in industrial systems and power conversion as well as in switching operations. The IRF5305STRRPBF is also suitable for use in high-frequency devices, where it provides superior performance and reliability when compared to other types of MOSFETs.
The IRF5305STRRPBF is also used in audio and video applications such as amplifiers and recording devices. In audio applications, the IRF5305STRRPBF is used to amplify signals and provide superior sound reproduction. In video applications, the IRF5305STRRPBF is used to transmit a high-resolution video signal. The IRF5305STRRPBF can also be used to in various other applications such as inverters and converters and in low-power switching operations.
The IRF5305STRRPBF is an efficient MOSFET with lower resistance and power losses. Its low on-resistance, fast switching speeds, and superior voltage ratings make it ideal for a variety of applications in power management, switching, and converters. Its superior performance and reliability make it a popular choice for industrial and automotive systems, as well as for audio and video applications.
The specific data is subject to PDF, and the above content is for reference
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