Allicdata Part #: | IRF520NSTRR-ND |
Manufacturer Part#: |
IRF520NSTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 9.7A D2PAK |
More Detail: | N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surfa... |
DataSheet: | IRF520NSTRR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 5.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF520NSTRR is a special type of MOSFET (metal-oxide-silicon field-effect transistor) with three terminals referred to as the drain, gate and source. It is available in a surface-mount package and is most often used as a low-side switch in digital circuits. This article provides an introduction of the IRF520NSTRR\'s application field, as well as its working principle.
Application Field of IRF520NSTRR
The IRF520NSTRR is a commonly used MOSFET in various applications such as power converters and electronic motor drives. It is also suitable for switching operations including:
- Motor control
- DC/DC converter
- Lighting applications
- Battery management applications
- High-current switching applications
- Load Switching
Due to its low on-resistance, the IRF520NSTRR is particularly well-suited for power efficiency applications. Further, it is capable of up to 1A switching current and has low gate-to-source capacitance and gate threshold voltage.
Working Principle of IRF520NSTRR
When a voltage is applied to the gate, it attracts electrons and holes, allowing current to flow through the channel and from the drain to the source. By manipulating the voltage, the channel is opened or closed, thus allowing or blocking the current. This effect is known as the depletion mode, because electrons are depleted from the channel when the switch is closed. The closing of the switch causes the drain-source voltage to drop very low, resulting in an almost open circuit.
When a positive voltage is applied to the gate, it repels electrons, creating an inversion layer. This layer of positive charge creates an electric field and allows a large current to flow through, corresponding to the depletion mode of operation. The gate-source voltage, also known as the threshold voltage, is the minimum voltage needed in order to create this inversion layer and allow the current to flow.
Using these principles, the IRF520NSTRR can be used as a high-power switch and is particularly useful for applications like motor control and DC/DC converters. It is also capable of delivering up to 1A of current and offers superior power efficiency, making it an ideal choice for high-current applications.
Conclusion
In conclusion, the IRF520NSTRR is a common type of MOSFET that is used in power converter and electronic motor drive applications. It is specially designed with low on-resistance, low gate-to-source capacitance and low gate threshold voltage. By manipulating the voltage, it can be used as a high-power switch and is capable of delivering up to 1A of current. This makes it an ideal choice for applications where power efficiency is needed. With its versatile application field and superior performance, the IRF520NSTRR is an excellent choice for high-current applications.
The specific data is subject to PDF, and the above content is for reference
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