IRF530PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	88W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	670pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	160 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

IRF530PBF is a single-channel N-channel enhancement mode TrenchFET Power MOSFET developed by International Rectifier Corporation. This power transistor is an advanced member of the advanced family of TrenchFET power MOSFETs. The IRF530PBF is particularly suitable for use in low-power, high-speed switching applications.

Structure and characteristics of IRF530PBF

The IRF530PBF features a molded single-channel N-channel enhancement mode TrenchFET power MOSFET in an SO-8 package. This transistor is composed of an N-channel vertical trench MOSFET with a metal oxynitride (MONOS) process. This power transistor features a wide range of features designed to provide superior performance and reliability, including a very low drain-source on-state resistance and extremely low gate charge. The IRF530PBF also employs a superior thermal design to ensure excellent thermal performance.

Application fields of IRF530PBF

The main application field of IRF530PBF is switching applications that require low power, high speed and high efficiency. This power transistor is suitable for use in switching converters, high-frequency DC-DC converters, high-speed switching circuits, and more. The IRF530PBF is also suitable for use in applications such as digital switching systems and analog amplifiers.

Working principle of IRF530PBF

The working principle of the IRF530PBF is based on the principle of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). When this power transistor is in enhancement mode, a small current flows through the gate-source in order to turn on the device. When the transistor is in saturation mode, the current is completely off and the gate-source voltage is equal to the gate-source voltage. In other words, the drain-source voltage is equal to the source-drain voltage. When an electric field is applied to the gate-source region of the MOSFET, electrons are attracted from the source region and attracted to the oxide layer on the surface of the transistor, which produces a channel for electron movement and thus making the device turn on. This, in turn, results in a current flow in the drain-source path. When the electric field is removed, the current stops flowing and the transistor turns off.

Conclusion

The IRF530PBF is a single-channel N-channel enhancement mode TrenchFET Power MOSFET developed by International Rectifier Corporation. This power transistor offers superior performance and reliability, and is particularly suitable for use in low-power, high-speed switching applications. The IRF530PBF works on the principle of MOSFET, and is employed in a wide range of applications such as digital switching systems, analog amplifiers, and more.

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