Allicdata Part #: | IRF614STRRPBF-ND |
Manufacturer Part#: |
IRF614STRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 2.7A D2PAK |
More Detail: | N-Channel 250V 2.7A (Tc) 3.1W (Ta), 36W (Tc) Surfa... |
DataSheet: | IRF614STRRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF614STRRPBF is an N-channel, power MOSFET transistors in TO-220 package. It is mainly used in high power switching applications, solenoid and relay driving, stereo power amplifiers, and SMPS. This MOSFET comes with an active 3W DPAKITL-4 lead forming and robust highly reliable construction for AC and DC operations.
The IRF614STRRPBF has a drain-source breakdown voltage of 100V and a drain-source ON resistance of 0.045 Ω. It is manufactured using International Rectifier\'s advanced Power MOS 8 process which ensures superior performance and reliable operation over a wide range of temperatures. The device also has a maximum PD (power rating) of 4.0 W and a maximum junction temperature of 200°C.
The working principle of the IRF614STRRPBF is based on field effect technology. This device utilizes an insulated gate to control the current flow from the source to the drain. The gate of the MOSFET is connected to a voltage source which creates an electric field between the gate and the channel. The electric field attracts electrons from the source to the channel hence creating a conductive path for the current. The higher the voltage on the gate, the more the electrons attracted and the higher the current through the channel.
The IRF614STRRPBF is widely used in various applications such as switching and amplification of audio signals,smoothing supply rails, pulse and converter applications, power supply circuits and much more. In power switch applications, it can be used to switch any type of load such as resistive or inductive. As a result, it is being used in a wide range of power switching applications such as motor drives, relay drivers, etc.
The device is also used in audio power amplifiers due to its low drive voltage requirement, low on-resistance, and low output capacitance. Its excellent gate charge and fast speeds of switching make it suitable for pulse and converters applications as well. It is also often used in power supplies due to its excellent thermal management.
To summarize, the IRF614STRRPBF is a popular N-channel MOSFET transistor which is used in high power switching applications and audio power amplifiers. It is manufactured using a reliable and advanced technology which ensures fast speeds and low drive voltage requirements. The working principle of the device is based on field effect technology wherein an electric field is created to attracts electrons to create a conductive path for the current. The device has a wide range of applications such as motor drivers, audio drivers, power supplies, and more.
The specific data is subject to PDF, and the above content is for reference
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