Allicdata Part #: | IRF630SPBF-ND |
Manufacturer Part#: |
IRF630SPBF |
Price: | $ 1.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 9A D2PAK |
More Detail: | N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface M... |
DataSheet: | IRF630SPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.22850 |
10 +: | $ 1.10943 |
100 +: | $ 0.89170 |
500 +: | $ 0.69353 |
1000 +: | $ 0.57464 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 5.4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta), 74W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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,IRF630SPBF is a semiconductor device of the field effect transistor (FET) family. It is typically used to control currents in circuits, switch high or low power signals, and generally function as a signal amplifier in circuits. It is similar to a transistor in function and has the same three positive and negative pins for connecting it to a circuit. In terms of types of FETs, IRF630SPBF belongs to the class of single MOSFETs.
MOSFET is an acronym for Metal-Oxide-Semiconductor Field-Effect Transistor, and this type of transistor effect is based on a voltage-controlled design. In a MOSFET circuit, the current flow between the drain and the source pins is controlled by the amount of voltage applied to the gate. IRF630SPBF works in much the same way. It is a voltage-controlled dual drain device designed to switch on and off with the help of a gate voltage.
When a negative voltage is applied to the gate of IRF630SPBF, it will cause an Electric Field to form between the source and the drain. This Electric Field acts like a barrier, allowing or disallowing current to flow between the two. When the Electric Field is strong enough, current will beallowed to flow between the source and the drain, and the transistor will be said to be "on". Conversely, when the Electric Field is not strong enough, current will be disallowed from flowing, and the transistor will be said to be "off".
IRF630SPBF is commonly used in high power applications such as power supply circuits, DC motor switching, switching high-voltage circuits, and power amplifiers. It has a low on-resistance and a low gate-source threshold voltage, which makes it suitable for use in low voltage applications. It is also suitable for use in high-current applications as it is capable of handling up to 35A of continuous current. Additionally, IRF630SPBF can handle up to 175V of drain to source voltage.
In conclusion, IRF630SPBF is a single MOSFET transistor that is commonly used to control high-current loads and switch signals. It is suitable for a variety of applications and can handle up to 175V of drain to source voltage, as well as up to 35A of continuous current. Its voltage-controlled design allows it to be easily switched on and off, making it a reliable and versatile component in any circuit.
The specific data is subject to PDF, and the above content is for reference
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