Allicdata Part #: | IRF6716MTR1PBFTR-ND |
Manufacturer Part#: |
IRF6716MTR1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 39A DIRECTFET |
More Detail: | N-Channel 25V 39A (Ta), 180A (Tc) 3.6W (Ta), 78W (... |
DataSheet: | IRF6716MTR1PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Ta), 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 3.6W (Ta), 78W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DIRECTFET™ MX |
Package / Case: | DirectFET™ Isometric MX |
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IRF6716MTR1PBF is a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) with single N-channel enhancement mode. It belongs to the classification of transistors and FETs, MOSFETs, single. It is a power-driven device, meaning it is designed to control large amounts of voltage in an Electronic Circuit.
This device has very versatile applications in a wide range of industrial circuits and has a very wide range of gate voltages. It is an ideal choice for use in a wide range of low-noise, high-power circuits and for use in circuits with high surge voltages. It is also useful for use in circuits with varying temperature operating environments and for use in circuits of high temperature operating environments.
IRF6716MTR1PBF has a three-terminal structure design with source, gate, and drain. It works by controlling the flow of electrons through the device by using the gate voltage and source/drain current. When a positive voltage is applied to the gate terminal, it creates an electric field which attracts the electrons near the gate. This creates a depletion region which reduces the electric field and allows the flow of current through the channel. Inversely, when a negative voltage is applied to the gate, the electric field is reversed, the depletion region is reduced, and the source/drain current flow is blocked.
The most important feature of the IRF6716MTR1PBF is its low threshold voltage, which makes it ideal for use in low voltage applications. Its exceptionally high breakdown voltage and its constant current, low switching losses and low on-resistance are also desirable for applications where switching and high current-handling capability are a necessity.
Another main advantage of the device is its temperature stability. It has an exceptional thermal resistance and temperature stability, which makes it ideal for use in a wide range of temperature operating environments. This makes it suitable for use for a variety of applications such as high-power audio amplifiers, high-power power supplies, relays and other switching circuits.
The IRF6716MTR1PBF has a wide range of features that make it an ideal choice for use in a wide range of industrial circuits. It is designed to work at a wide range of gate voltages and can easily accommodate a wide range of operating temperatures and environmental conditions. It is also designed to provide superior performance and reliability in high-power switching applications. This makes it an excellent choice for use in numerous types of industrial applications.
The specific data is subject to PDF, and the above content is for reference
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