Allicdata Part #: | IRF6215LPBF-ND |
Manufacturer Part#: |
IRF6215LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 150V 13A TO-262 |
More Detail: | P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Throu... |
DataSheet: | IRF6215LPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF6215LPBF is a single, Enhancement Mode, High-Side Mosfet which is specifically designed for higher frequency SMPS applications. Its improved package design focuses on providing increased power and better thermal performance.
The IRF6215LPBF has a low channel on resistance, RDS(on), and high transconductance, gfs. Devices are available in both logic-level and standard versions. It is designed to withstand high voltage spikes and to deliver reliable, highly efficient switching.
The IRF6215LPBF is used in a wide range of applications, such as motor control, point of load (POL) converters, high voltage DC to DC converters (Buck, Boost, and Inverting), AC to DC converters, DC to AC inverters, switching regulators, isolated DC/DCs, power switching with high frequency, motion control and hard disk motor control.
The working principle of the IRF6215LPBF involves four distinct steps. First, a gate-source voltage, VGS, must be applied to turn the device on. An electric current, ID, then flows through the Source and Drain of the device, which can be used to control the device\'s state. The third step is the switching, where the transistor is turned off by pulling the gate-source voltage below the threshold voltage, Vgsth. Finally, during the resetting process, the on-state current is actively dissipated by the substrate, and the device is ready to be turned on again.
In summary, the IRF6215LPBF is a single, Enhancement Mode, High-Side Mosfet that is optimized for high efficiency switching applications. It is well suited for motor control, point of load (POL) converters, high voltage DC to DC converters, AC to DC converters, DC to AC inverters, switching regulators, isolated DC/DCs, power switching with high frequency, motion control, and hard disk motor control applications. Its working principle involves four distinct steps; applying a gate-source voltage, flow of electric current, switching and resetting.
The specific data is subject to PDF, and the above content is for reference
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