IRF6714MTR1PBF Discrete Semiconductor Products

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IRF6714MTR1PBF is an N-channel enhancement mode MOSFET with an ultra-low on-resistance, making it suitable for a wide range of applications. As one of the most popular power MOSFETs available, the device features a gate-source voltage of +/- 20V and breakdown voltage of 100V. It also has a high current capacity with a maximum continuous drain current of 90A and a maximum pulsed drain current of 154A. With the intention of making it suitable for power applications, the IRF6714MTR1PBF also features a low gate charge of 35nC and a low total gate charge of 115nC. This allows for better performance than conventional MOSFETs.The IRF6714MTR1PBF silicon MOSFET is commonly used in a variety of applications including motor control, DC/DC converters, AC/DC converters, switch mode power supplies and other power management applications. The device is capable of delivering high efficiency and excellent linearity, resulting in improved system performance. It has low on-resistance and low gate charge, along with high power density, making it a highly efficient MOSFET.The IRF6714MTR1PBF uses insulated gate bipolar transistor (IGBT) construction and employs advanced technology where the drain current control is done through the insulated gate. The driver voltage is applied between the gate and the source, and when the driver voltage is applied, the current starts flowing through the device. It is important to note that the device has a certain turn-on and turn-off time. This ensures that when the driver voltage is applied, the drain current will be turned on with sufficient response time. When the driver voltage is removed, the MOSFET will turn off with the same response time. This makes sure that the device is not exposed to steady -state over currents, allowing the device to operate more efficiently.In addition to that, the IRF6714MTR1PBF also has a built-in body diode for reverse current protection. In order to make use of this feature, the user must ensure that the device is connected correctly in order for it to function correctly. This device is also capable of withstanding high temperature operation and is suitable for operating in both continuous and pulse operation conditions.In order to ensure maximum performance from the IRF6714MTR1PBF, it is important to ensure the device is cooled properly. It can be cooled passively or actively with a heatsink. When passively cooled, it is important to remember to attach the heatsink firmly to the device to make sure there is good thermal contact. There are also thermal pads available to provide additional cooling performance. The IRF6714MTR1PBF is a highly versatile device which offers a range of applications thanks to its low on-resistance, low gate charge, high current capacity and high power density. It is capable of being used in motor control, DC/DC converters, AC/DC converters, switch mode power supplies and other power management applications. It can also handle high temperatures and is suitable for both continuous and pulse operation conditions. With its insulated gate construction, it is capable of delivering excellent linearity and power efficiency, making it an effective and reliable power MOSFET.

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