IRF630BTSTU_FP001

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF630BTSTU_FP001 is an N-Channel Enhancement Mode MOSFET that is ideal for use in many power switching applications. It is part of the 4171G catalog of Low Voltage MOSFETs from Infineon Technologies, and it offers superior performance in terms of conduction, stability, and usability. IRF630BTSTU_FP001 is an ideal choice for applications such as DC/DC converters, electric motors, electronic ballasts, AC/DC converters, and wireless power supplies. The device is also suitable for applications such as motor drives, power management, and low-voltage power electronics. It is available in multiple packaging options such as TO-220AG and TO-252.

The IRF630BTSTU_FP001 has a single N-Channel enhancement mode MOSFET. It has an operating drain source voltage of 30V and a rated drain current of 10A. It has a low RDS(on) of 0.033Ω and can handle up to 41W of power dissipation. It has an excellent thermal performance due to its low thermal resistance. The device has a breakdown voltage of 160V and has an exceptional gate charge to turn-on delay time ratio. It has output characteristics that are beneficial for applications such as DC/DC converters, lighting ballasts, and power-down.

The working principle of the IRF630BTSTU_FP001 is based on the basic principles of a MOSFET. A MOSFET is a semiconductor device that consists of four terminals known as the gate, source, drain, and body. The gate terminal is used to control the conduction between the source and drain terminals. The body is connected to the source terminal, and is used to control the electrical properties of the device. When a voltage is applied to the gate terminal, it creates an electric field that causes the electrons or holes to flow through the source to the drain. This creates an electrical current, which allows the device to switch between an ON and OFF state.

The IRF630BTSTU_FP001 is an excellent choice for many power switching applications. The device has low gate charge, low RDS(on) and excellent thermal performance. It is suitable for many applications such as DC/DC converters, motor drives, lighting ballasts, and AC/DC converters. The device operates on the basic principles of a MOSFET, and can easily switch between an ON and OFF state for maximum efficiency.

The specific data is subject to PDF, and the above content is for reference