Allicdata Part #: | IRF630B_FP001-ND |
Manufacturer Part#: |
IRF630B_FP001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 9A TO-220 |
More Detail: | N-Channel 200V 9A (Tc) 72W (Tc) Through Hole TO-22... |
DataSheet: | IRF630B_FP001 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 72W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
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IRF630B_FP001 is a type of field-effect transistor (FET). This type of device is also known as a metal-oxide-semiconductor field-effect transistor (MOSFET). FETs and MOSFETs are three-terminal devices that control the flow of electric current based on the magnitude of an input voltage. The IRF630B_FP001 is a single FET, meaning the device has just one channel through which current can flow.
Application Field
The IRF630B_FP001 is a power MOSFET specifically designed to control high current and high-frequency switching applications. It is well suited for use in switching power supplies, voltage regulators, and other high-power regulation circuits. This type of device has a wide range of applications due to its ability to control high currents, fast switching speeds, and wide voltage operations. In particular, the IRF630B_FP001 can be used in power amplifiers, fast loading and unloading applications, motor control, variable speed drives, and more.
Working Principle
The IRF630B_FP001 is a vertical channel MOSFET, meaning the channel in which current flows is formed from the source to drain terminal through a vertical section of the MOSFET silicon body. This device works by controlling the amount of gate-source voltage that is applied to a MOSFET. When a positive voltage is applied to the gate, it tends to attract free electrons from the source and into the gate oxide, which creates a conductive-channel between the source and drain terminal. This causes the device to conduct current between the two terminals, creating a low-resistance path.
Once the gate-source voltage is removed, the electrons return to the source, effectively blocking the current flow from the source to drain. This makes the MOSFET an effective switch for controlling the flow of electric current based on the presence or absence of an input voltage. The ability to control high-current and high-frequency switching applications makes the IRF630B_FP001 an excellent choice for a wide range of applications.
IRF630B_FP001 is also designed to operate at high frequencies and wide voltages, making it an ideal choice for high-power regulation applications. In addition, the device is designed with a built-in diode, which helps to protect other components by providing a conductive path in the event of an overvoltage situation. This makes the device even more attractive for applications with sensitive electronic components or those that may be exposed to unexpected external voltages.
Overall, the IRF630B_FP001 is an excellent choice for a wide range of applications. Its ability to control high current and high-frequency switching makes it an ideal choice for high-power regulation applications, voltage regulators, motor control, variable speed drives, and more. Its wide voltage and fast switching speeds make it a great choice for power amplifiers, fast loading and unloading, and more.
The specific data is subject to PDF, and the above content is for reference
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