IRF6892STR1PBF

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IRF6892STR1PBF is a single n-channel enhancement mode power field effect transistor developed by IRF. It is mainly used for a variety of applications requiring power switching such as motor control, power control, backlighting, telecommunication, switching power supply and so on.

The IRF6892STR1PBF is a 70V, 9A n-channel MOSFET featuring an avalanche immune process with low on-resistance, low gate charge and fast switching speed.

Typical applications of the IRF6892STR1PBF include DC-DC conversion, switch mode power supply, general purpose switching, power MOSFET gate drive, and DC motor control.

The IRF6892STR1PBF is designed using a highly reliable and advanced planar technology featuring low on-state resistance, low gate charge, maximum avalanche energy rating and high RDS(on). This device is capable of delivering up to 9A of output current, which is double compared to the regular IRF6892STR1PBF.

The IRF6892STR1PBF is supplied with a tape- and-reel packaging. This allows for easy multiplication of the devices and automatic placement in a PCB assembly line. The IRF6892STR1PBF is available in a TO-220 or an SOT-223 package.

The device has an integrated gate protection circuit that helps protect the internal circuit of the device from intrinsic high voltage spikes. This device is optimized for low on-state and gate charge. Its low RDS(on) helps to improve the efficiency of power conversion, and its ultra-fast reverse body diode helps to minimize power loss.

The IRF6892STR1PBF also has excellent high temperature performance, with a maximum drain current of up to 9A, a drain voltage of up to 70V, and a maximum avalanche energy rating of up to 130mJ. It is also capable of withstanding a maximum junction temperature of up to 175°C.

The IRF6892STR1PBF uses an enhancement mode of operation to ensure that it can switch at high frequencies, while avoiding any degradation in performance due to external voltage spikes and spikes. The device is designed to be used in both linear and switching applications. The internal gate protection circuit also helps protect the device from electrical overstress.

The IRF6892STR1PBF is a robust power switch that is capable of delivering excellent performance in simulation and testing applications. With its low on-resistance and gate charge, the device is capable of offering excellent energy efficiency and thermal performance. Moreover, its fast switching speed helps to reduce the overall power loss.

The IRF6892STR1PBF is a highly reliable MOSFET switch that is ideal for industrial and commercial applications. Its low voltage and current ratings, combined with its low gate charge, make it suitable for applications that require high power switching. Its high temperature and resistance rating, along with its reliable protection circuit, make it an ideal choice for applications requiring a high level of reliability.

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