IRF6721STR1PBF

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IRF6721STR1PBF is a FET suitable for many high frequency applications and suitable for applications requiring high current, low drain source resistance and small gate charge.

The IRF6721STR1PBF is a n-channel enhancement mode MOSFET that has been designed specifically for power management, switching and amplification applications. It is manufactured by International Rectifier and is housed in a 4-pin TO-220 package, which provides the user with a reliable and robust design. The device has a maximum drain current of 20A, a maximum drain-source voltage of 20V, a maximum power dissipation of 175W, an on-state resistance of 0.01 ohms, a gate threshold voltage of 2.5V, and a switching speed of 4nS. The device also features a patented thermal design which helps the user to maintain safe operating temperatures.

This device is ideal for a wide range of applications such as AC motor controls, synchronous rectification circuits, DC-DC converter circuits, amplifier circuits, and power supply circuits. The device also offers a wide range of features such as low gate charge and low on-state drain-source resistances which help to reduce power consumption in power supply applications. In addition, the device also offers a fast switching speed which helps to improve the efficiency of circuits.

The working principle of the IRF6721STR1PBF is based on the well-known MOSFET device architecture. The device consists of four terminals: drain, source, gate, and body. The body terminal acts as a substrate, while the source and drain terminals are connected to the source and drain regions respectively. When a positive voltage is applied to the gate terminal, it creates an electric field which attracts electrons to the substrate, effectively establishing a conducting channel between the source and drain terminals. As the voltage is increased, the current through the channel will also increase, allowing more current to flow through the drain. The device can be used in both enhancement mode and depletion mode.

The IRF6721STR1PBF is a versatile MOSFET designed for wide range of power applications, thanks to its improved performance, high reliability, and wide operational range. It is also suitable for applications requiring small gate charge and low on-state drain-source resistance. The device is suitable for applications such as switching and amplification, synchronous rectification circuits, AC motor controls, and DC-DC converter circuits. The device is available in the 4-pin TO-220 package and is ideal for low-cost, high-density designs.

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