IRF6893MTR1PBF Allicdata Electronics
Allicdata Part #:

IRF6893MTR1PBFTR-ND

Manufacturer Part#:

IRF6893MTR1PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 29A MX
More Detail: N-Channel 25V 29A (Ta), 168A (Tc) 2.1W (Ta), 69W (...
DataSheet: IRF6893MTR1PBF datasheetIRF6893MTR1PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 168A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 29A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 13V
FET Feature: --
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET™ MX
Package / Case: DirectFET™ Isometric MX
Description

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The IRF6893MTR1PBF is a transistor of the FET family, more specifically a single MOSFET. It is a N-Channel Mosfet, meaning it is sensitive to the voltage of the channel between the Gate and Source leads. The channel is turned on when the voltage changes to a point where the conducting channel is established and the current begins to flow. It is normally in an “off” state until a voltage differential is provided, at which point the Gate allows current from the Source to the Drain, completing the circuit.

This MOSFET is high voltage and high power capable, making it a great choice for many applications, such as robotics, power supplies, and other high-power, high-voltage electronics. Its range is from -55°C to 175°C temperature range, with a drain-to-source breakdown voltage of up to 500V and a drain current capacity of up to 40A. Its maximum on-state resistance (Ron) is 0.0068 ohm and at a 12V gate-source voltage its typical transconductance is 0.88 S. This makes it suitable for applications that require high current and/or high voltage capability.

One of the most commonly used applications of the IRF6893MTR1PBF is in motor control systems. It can be used in a variety of different motor control circuits such as stepper motor control drones, electric vehicles, and other motor control applications. Motor control can differ based on the type of motor, but the act of controlling the motor is the same. The IRF6893MTR1PBF MOSFET can be used to control the speed and direction of the motor, as well as provide power to the motor.

For example, in a stepper motor control application, the IRF6893MTR1PBF may be used as a switcher, allowing the stepper motor to move in discrete steps, as well as to provide power to the motor. To do this, the MOSFET takes the difference between the Gate and Source voltage as an input, and once it exceeds the threshold, the Gate allows current to flow from Source to Drain, thus switching the motor on/off. As the threshold is continuously changed, the MOSFET is able to control the speed and direction of the motor.

The IRF6893MTR1PBF is a versatile device capable of handling high power and is used in a wide range of applications, from microcontroller programming to controlling motors. Its simple yet effective design, along with its wide range of uses and robust construction, make it an ideal choice for many applications in the world today.

The specific data is subject to PDF, and the above content is for reference

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