IRF6713STR1PBF

Vgs(th) (Max) @ Id:	2.4V @ 50µA
Package / Case:	DirectFET™ Isometric SQ
Supplier Device Package:	DIRECTFET™ SQ
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.2W (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2880pF @ 13V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta), 95A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction IRF6713STR1PBF is a N-Channel, Enhancement-type, Junction Field-Effect Transistor (JFET), also known as an insulated-gate FET (IGFET), that operates by utilizing the electrical field between a source electrode and a drain electrode in order to modulate the current flow. This JFET has an extremely high input impedance and low capacitance, many times greater than most bipolar transistors, making them quite useful for applications like Broadcast IF/RF amplifiers, as well as for DC programmed attenuators, because of its low power handling capabilities.How It Works An N-Channel JFET operates by utilizing the electrical field between its two electrodes, the source and the drain, to create a "channel" between them. When a positively charged gate voltage is applied, the electrons in the semiconductor crystal are drawn away from the source electrode towards the gate electrode. As a result, a region of negative charge is formed at the metallurgical junction between the gate and the source, causing the voltage at the Gate-Source Voltage Terminal to decrease. This is known as the Source-Gate Cutoff Voltage.The gate voltage also causes a depletion region to form between the source and drain electrodes. This region, with its high dielectric coefficient and low capacitance, is what allows the JFET to withstand high voltages and offer low power consumption. When a negative voltage is applied to the Gate-Drain Voltage Terminal, electrons from the drain get pulled towards the gate, resulting in a depletion region formed in the drain-to-source direction, which allows for current to flow between the drain and the source. This is known as the Drain-Source Current-Voltage Characteristic, which is used to control the amount of current that passes through the transistor. Application Field IRF6713STR1PBF can be used to build high-performance amplifiers, voltage-controlled oscillators, limiters, modulators, multiplexers and variable gain amplifiers, as well as various active filters. The high input impedance of this JFET transistor means that it is well-suited for circuits dealing with RF radio signals in order to provide enough isolation between the stages.This component is also very well-suited for military and aerospace applications, as it can operate in extreme temperatures ranging from -55 to +175 degrees C. Its low off-state leakage current and high input impedance of up to 11K ohms makes it attractive for very high impedance inputs in general, making it suitable for impedance matching, Bluetooth and fiber optic applications.Conclusion The IRF6713STR1PBF is a reliable N-channel, junction field-effect transistor that provides excellent performance in applications requiring low power and high input impedances. It is capable of withstanding extremely high temperature ranges and its low off-state leakage current makes it attractive for DC-programmed attenuators and high impedance inputs. This component can be used in a variety of applications, ranging from military and aerospace to Bluetooth and fiber optic. No matter what the application is, though, the IRF6713STR1PBF provides exceptional performance and reliability in even the most challenging conditions.

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