Allicdata Part #: | 497-2757-5-ND |
Manufacturer Part#: |
IRF630 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 200V 9A TO-220 |
More Detail: | N-Channel 200V 9A (Tc) 75W (Tc) Through Hole TO-22... |
DataSheet: | IRF630 Datasheet/PDF |
Quantity: | 6137 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | MESH OVERLAY™ II |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF630 is a field effect transistor (FET). It is a single P-type enhancement-mode device commonly manufactured in several package style combinations and temperature ranges. This type of FET has a wide variety application as a switching device, power device, audio amplifier and other analog application circuits.
IRF630 Application Field
The IRF630 is designed for use as a switch or amplifier in various types of circuits. It works as a switch in analog and digital applications, depending on the choice of threshold voltage. By adjusting the gate voltage, the IRF630 can turn the FET on and off which in turn can activate a switch. The IRF630 is typically used in low-voltage, low-power applications such as AC inverters, DC-DC converters, and also in audio amplifiers.
The IRF630 is ideal to use in low-frequency, low-power audio applications. It is also suitable for switching and amplifier applications using transformers due to its high input impedance. Moreover, this single FET is often employed in high-frequency switching operations up to a few MHz as it has low input and output capacitance.
IRF630 Working Principle
The working principle of the IRF630 is based on the operation of a field effect transistor (FET). FETs are unipolar transistors for amplification and switching purposes and operate in two modes – enhancement-mode and depletion-mode. In enhancement-mode, the FET is normally off and needs a small voltage applied at the gate to turn it on, while in depletion-mode, the FET is normally on and needs a small voltage applied at the gate to turn it off.
The IRF630 is an enhancement-mode FET, as such it is normally off. From the schematic symbol, we can see that the IRF630 contains three terminals – gate, drain and source. A small voltage applied at the gate (usually zero volts or slightly more) is amplified by the FET’s structure and allows current to flow between the drain and source terminals. The IRF630 is designed to work with the gate voltage lower than the source voltage.
The IRF630 FET can have a conductance of up to 0.4mS at the threshold voltage of 0.7V or higher. By controlling the gate voltage, it is possible to limit the drain current and turn the FET on and off. This operation make them ideal as switching devices in various types of analog and digital circuits.
Conclusion
The IRF630 is a single P-type enhancement-mode field effect transistor with a wide range of applications in switching, power and audio amplifier circuits. Depending on the choice of threshold voltage, the IRF630 can be used in both digital and analog applications. The IRF630 works according to the principle of field effect transistors and is typically off when a small voltage applied at the gate.
The specific data is subject to PDF, and the above content is for reference
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