Allicdata Part #: | IRF644-ND |
Manufacturer Part#: |
IRF644 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 14A TO-220AB |
More Detail: | N-Channel 250V 14A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | IRF644 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 8.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRF644 is a type of N-Channel MOSFET (field-effect transistor) manufactured by International Rectifier. This type of FET is made up of three terminals, which consists of the gate, drain, and source. It is a voltage-controlled device, which means that the current flowing through the circuit is controlled by the voltage present on the gate terminal. This is the principle of operation for all MOSFETs.
In terms of its application field, the IRF644 is mainly used as a switching device in consumer electronics, automotive, and industrial applications. An example of its use is in the power supply of a computer or laptop. It is used to control the voltage supplied to different components. It can also be used in circuits to amplify small signals and regulate a supply voltage.
More specifically, the IRF644 is used for applications that require fast switching capabilities to prevent power dissipation and power losses. It is extremely durable and can withstand a wide range of temperatures, making it an ideal choice for applications where high temperatures and power surges are common. Additionally, the IRF644 is suitable for use in high-frequency switching applications due to its low on-resistance, low capacitance, and fast switching speed.
The working principle behind the IRF644 is based on the behavior of electrons in a semiconductor device. When a voltage is applied to the gate terminal, a depletion region is created between the source and drain terminals, which prevents current from flowing through. When a voltage is applied to the source terminal, then current can flow through the channel. The magnitude of the current is determined by the voltage applied at the gate terminal.
The gate-source voltage controls the conduction of current in the device. The higher the gate-source voltage, the higher the current. Conversely, the lower the gate-source voltage, the lower the current. The IRF644 has been optimized to provide higher current densities than other FETs, making it a popular choice for power amplification applications.
In conclusion, the IRF644 is a MOSFET that is typically used for fast switching applications like powering computer components or signal amplification. It has a unique four-layer construction that allows it to withstand a wide range of temperatures and power surges. It is also capable of higher current densities than other FETs, making it an ideal choice for power applications. Its working principle is based on the behavior of electrons in a semiconductor device, where the source and gate terminals control the current conduction in the device. This makes the IRF644 a reliable and versatile device for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRF6674TR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 13.4A DIR... |
IRF6710S2TR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 12A DIREC... |
IRF6712STR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 17A DIREC... |
IRF6714MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 29A DIREC... |
IRF6715MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 34A DIREC... |
IRF6716MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 39A DIREC... |
IRF6721STR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 14A DIREC... |
IRF6722MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A DIREC... |
IRF6722STR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 13A DIREC... |
IRF6724MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 27A DIREC... |
IRF6725MTR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 28A DIREC... |
IRF6726MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 32A DIREC... |
IRF6727MTR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 32A DIREC... |
IRF6775MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 150V 4.9A DIR... |
IRF6785MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 3.4A DIR... |
IRF6215LPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 150V 13A TO-2... |
IRF6604TR1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12A DIREC... |
IRF6603TR1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 27A DIREC... |
IRF6607TR1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 27A DIREC... |
IRF6100PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 20V 5.1A FLIP... |
IRF6722STRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A DIREC... |
IRF6710S2TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 12A DIREC... |
IRF630B_FP001 | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 9A TO-22... |
IRF6797MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 36A DIREC... |
IRF6713STR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 22A DIREC... |
IRF6795MTR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 32A DIREC... |
IRF6633ATR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 16A DIREC... |
IRF6720S2TR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A DIREC... |
IRF620B_FP001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 5A TO-22... |
IRF630BTSTU_FP001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A TO-22... |
IRF640STRLPBF | Vishay Silic... | -- | 800 | MOSFET N-CH 200V 18A D2PA... |
IRF60B217 | Infineon Tec... | 1.25 $ | 864 | MOSFET N-CH 60V 60AN-Chan... |
IRF630SPBF | Vishay Silic... | 1.36 $ | 1000 | MOSFET N-CH 200V 9A D2PAK... |
IRF620SPBF | Vishay Silic... | -- | 271 | MOSFET N-CH 200V 5.2A D2P... |
IRF614SPBF | Vishay Silic... | 1.38 $ | 105 | MOSFET N-CH 250V 2.7A D2P... |
IRF610STRLPBF | Vishay Silic... | 0.71 $ | 800 | MOSFET N-CH 200V 3.3A D2P... |
IRF6728MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 23A DIREC... |
IRF6810STR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N CH 25V 16A S1N-C... |
IRF6892STR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 28A S3N-C... |
IRF6893MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 29A MXN-C... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...