| Allicdata Part #: | IRF644-ND |
| Manufacturer Part#: |
IRF644 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 250V 14A TO-220AB |
| More Detail: | N-Channel 250V 14A (Tc) 125W (Tc) Through Hole TO-... |
| DataSheet: | IRF644 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 280 mOhm @ 8.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF644 is a type of N-Channel MOSFET (field-effect transistor) manufactured by International Rectifier. This type of FET is made up of three terminals, which consists of the gate, drain, and source. It is a voltage-controlled device, which means that the current flowing through the circuit is controlled by the voltage present on the gate terminal. This is the principle of operation for all MOSFETs.
In terms of its application field, the IRF644 is mainly used as a switching device in consumer electronics, automotive, and industrial applications. An example of its use is in the power supply of a computer or laptop. It is used to control the voltage supplied to different components. It can also be used in circuits to amplify small signals and regulate a supply voltage.
More specifically, the IRF644 is used for applications that require fast switching capabilities to prevent power dissipation and power losses. It is extremely durable and can withstand a wide range of temperatures, making it an ideal choice for applications where high temperatures and power surges are common. Additionally, the IRF644 is suitable for use in high-frequency switching applications due to its low on-resistance, low capacitance, and fast switching speed.
The working principle behind the IRF644 is based on the behavior of electrons in a semiconductor device. When a voltage is applied to the gate terminal, a depletion region is created between the source and drain terminals, which prevents current from flowing through. When a voltage is applied to the source terminal, then current can flow through the channel. The magnitude of the current is determined by the voltage applied at the gate terminal.
The gate-source voltage controls the conduction of current in the device. The higher the gate-source voltage, the higher the current. Conversely, the lower the gate-source voltage, the lower the current. The IRF644 has been optimized to provide higher current densities than other FETs, making it a popular choice for power amplification applications.
In conclusion, the IRF644 is a MOSFET that is typically used for fast switching applications like powering computer components or signal amplification. It has a unique four-layer construction that allows it to withstand a wide range of temperatures and power surges. It is also capable of higher current densities than other FETs, making it an ideal choice for power applications. Its working principle is based on the behavior of electrons in a semiconductor device, where the source and gate terminals control the current conduction in the device. This makes the IRF644 a reliable and versatile device for many applications.
The specific data is subject to PDF, and the above content is for reference
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IRF644 Datasheet/PDF