Allicdata Part #: | IRF6610TRPBFTR-ND |
Manufacturer Part#: |
IRF6610TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 15A DIRECTFET |
More Detail: | N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (T... |
DataSheet: | IRF6610TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | DirectFET™ Isometric SQ |
Supplier Device Package: | DIRECTFET™ SQ |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1520pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 66A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF6610TRPBF is a high-voltage and high-power vertical power MOSFET which is widely used in consumer electronics and automotive applications. The MOSFET is primarily used for power management applications such as DC/DC converters, motor control, and over-current protection. It is manufactured by International Rectifier and has a Drain-Source breakdown voltage of 500V.
The MOSFET is a three-terminal device that provides high-speed Switching action between a power supply input and a load. It is comprised of a metal oxide layer between an insulated gate and the Drain-Source terminals. When a voltage is applied to the Metal Oxide Layer, the body is naturally held in an OFF position. When a positive voltage is applied to the Gate, the metal oxide layer of insulation is lowered and the body is now in an ON position.
The IRF6610TRPBF has an RDSon (ON-resistance) of 156 mΩ and a drain-source voltage rating of 500V. It is rated for a continuous drain current of 10A and a maximum Pulsed drain current of 28A. The Gate-Source breakdown voltage is equal to the Drain-Source breakdown voltage of 500V.
The device has an operating temperature range of -55 to +175 °C, with an avalanche energy rating of 200mJ. The MOSFET also features a wide safe operating area for maximum flexibility in load management applications.
The IRF6610TRPBF has many advantages compared to other MOSFETs. Unlike other MOSFETs, it offers enhanced power dissipation as it is designed to have less power loss due to its low resistance. The device also has a low enough gate threshold voltage so that it can be used in low voltage application. It is also designed with integrated internal drain-source diodes that allow safe operation even in the presence of an inductive load.
In terms of application fields, the IRF6610TRPBF can be used in many different types of power applications. It is frequently used in DC/DC converters, motor control applications, load switch applications and over-current protection applications. This MOSFET is also well-suited for power management solutions.
In conclusion, the IRF6610TRPBF is a high-performance vertical power MOSFET that can be used in many different power applications. It features a low RDSon, a wide safe operating area, and an avalanche energy rating of 200mJ. Moreover, it offers enhanced power dissipation with its low resistance and integrated drain-source diodes. The device is used in DC/DC converters, motor control, load switches and over-current protection applications.
The specific data is subject to PDF, and the above content is for reference
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