Allicdata Part #: | IRF6620TR1PBFTR-ND |
Manufacturer Part#: |
IRF6620TR1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 27A DIRECTFET |
More Detail: | N-Channel 20V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (... |
DataSheet: | IRF6620TR1PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4130pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 27A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 150A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF6620TR1PBF is a type of field-effect transistor (FET) that is used in a variety of electronic devices, including amplifiers, switches, power regulators, and motion control systems. It is a single P-channel, or PMOS, transistor specifically designed for use in low-power, low-voltage applications. Its power handling capability is limited compared to other FETs, so it is often used in conjunction with other components to create more powerful circuits.
At its simplest, an FET is a type of transistor that consists of an input gate and a source-drain junction. The gate is an insulated metal layer located between two semiconductor layers or “channels”. An external voltage applied to the gate controls the current flowing through the source-drain junction by modifying the conductivity of the semiconductor channels. In this way, transistors are used as switches and amplifiers.
The IRF6620TR1PBF is a PMOS device, meaning that it has a positively charged gate and a negative potential on the source-drain plates. When a positive voltage is applied to the gate, the FET turns on and a current passes through the source-drain junction. When the voltage is removed, the current stops. This operation is called saturation.
The IRF6620TR1PBF has a wide range of applications. It can be used as a voltage regulator in power supplies, as a switch in logic circuits, or as an amplifier in signal processing circuits. It can also be used to create a signal for motion control systems and provide precise current control for radio and audio circuits. Due to its low power draw, it is well suited for use in battery-powered circuits, such as laptops and smartphones.
The IRF6620TR1PBF is available in a variety of packages, including surface mount and through-hole versions. The surface mount version is the most common and is typically easier to solder and has a smaller footprint. Regardless of the package type, the IRF6620TR1PBF provides excellent performance, high switching speed, low quiescent current, and low on-resistance characteristics.
In conclusion, the IRF6620TR1PBF is a single P-channel FET device specifically tailored for low-power, low-voltage applications. Its low power draw makes it ideal for use in battery-powered devices such as laptops and smartphones. It is available in a variety of packages and offers excellent performance, high switching speed, low quiescent current, and low on-resistance. As a result, the IRF6620TR1PBF is a versatile device and is commonly used in amplifiers, switches, power supplies, logic circuits, motion control systems, and radio and audio circuits.
The specific data is subject to PDF, and the above content is for reference
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