Allicdata Part #: | IRF6623TRPBFTR-ND |
Manufacturer Part#: |
IRF6623TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 16A DIRECTFET |
More Detail: | N-Channel 20V 16A (Ta), 55A (Tc) 1.4W (Ta), 42W (T... |
DataSheet: | IRF6623TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | DirectFET™ Isometric ST |
Supplier Device Package: | DIRECTFET™ ST |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1360pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 55A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF6623TRPBF is a type of N-Channel Mosfet from the single type family. It is designed especially for switching and amplifying applications. This type of mosfet can provide an excellent performance in power management and level shifting functions. It features low on-resistance, high frequency switching capability, and low drive current.
This type of Mosfet has two distinct types. The depletion type is called an enhancement-type MOSFET, which is formed when the gate voltage is below a certain level. The body effect causes the on-resistance to increase when the drain voltage is increased. This type of mosfet can be used in circuits such as level converters and non-inverting buffers.
The opposite type of MOSFET is the enhancement-type MOSFET, which occurs when the gate voltage is above a certain level. When the drain voltage is increased, the on-resistance decreases, thus improving overall power efficiency. This type of mosfet is suitable for use in many applications, including audio amplifiers and other signal processing applications.
The IRF6623TRPBF can be used in various circuit applications, due to its low on-resistance and high switching speed. For example, it can be used as a constant current source in analog-to-digital converters, level shifting circuits, as well as power switching and power management circuits. It is also suitable for low-side switching and low-side protection.
The working principle of the IRF6623TRPBF is based on the principle of using a voltage difference between the gate and the source terminal to control the current flowing between the drain and the source. This voltage difference is caused by the applied bias voltage, which sets the operating current within the mosfet. When the desired current is achieved, the gate voltage is adjusted accordingly to control the flow of current. By varying the gate-source voltage, the switching speed can be controlled. In addition, the gate voltage also affects the gate-source voltage drop, which leads to a fast turn-on and turn-off of the MOSFET.
The IRF6623TRPBF is widely used in many areas of power management, including consumer electronics, telecommunications, medical, and automotive systems. It is also extensively used in analog applications where precise control of the on-resistance and switching times are necessary. In general, the IRF6623TRPBF is an excellent choice for power management, level shifting and switching applications in which high performance and reliability are required.
The specific data is subject to PDF, and the above content is for reference
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